Datasheet > IMYH200R012M1H

IMYH200R012M1H

更新时间： 2024-11-27 11:15:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
16页	1858K
描述
The CoolSiC™ 2000 V 12 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.

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IMYH200R012M1H 数据手册

IMYH200R012M1H

™

CoolSiC 2000 V SiC Trench MOSFET

™

CoolSiC 2000 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features

• V_DSS= 2000 V at T_vj= 25°C

• I_DCC= 123 A at T_c= 25°C

• R_DS(on)= 12 mΩ at V_GS= 18 V, T_vj= 25°C

• Very low switching losses

• Benchmark gate threshold voltage, V_GS(th)= 4.5 V

• Robust body diode for hard commutation

• .XT interconnection technology for best-in-class thermal performance

Potential applications

• String inverter

• Solar power optimizer

• EV-Charging

Product validation

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

• Please also note the application note AN2019-05 for power and thermal cycling

Description

1 – drain

2 – source

3 – Kelvin sense contact

4 – gate

Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L)

Type

Package

Marking

IMYH200R012M1H

PG-TO247-4-PLUS-NT14

20M1H012

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.10

2023-01-16

12 3 4 5 6 7...16

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