Datasheet > IMZ120R060M1H

IMZ120R060M1H

更新时间： 2024-09-16 19:34:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
17页	1220K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IMZ120R060M1H 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	2.32
Base Number Matches：	1

IMZ120R060M1H 数据手册

IMZ120R060M1H

CoolSiC™ 1200V SiC Trench MOSFET

Silicon Carbide MOSFET

Features

Drain

pin 1



Very low switching losses

Gate

pin 4

Threshold-free on state characteristic

Benchmark gate threshold voltage, V_GS(th)= 4.5V

0V turn-off gate voltage for easy and simple gate drive

Fully controllable dV/dt

Sense

pin 3

Source

pin 2

Robust body diode for hard commutation

Temperature independent turn-off switching losses

Sense pin for optimized switching performance

Benefits



Efficiency improvement

Enabling higher frequency

Increased power density

Cooling effort reduction

Reduction of system complexity and cost

Potential applications



Energy generation

Solar string inverter and solar optimizer



Industrial power supplies

Industrial UPS

Industrial SMPS



Infrastructure – Charge

Charger

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

Note:

the source and sense pins are not exchangeable, their exchange might lead to malfunction

Table 1

Type

Key Performance and Package Parameters

V_DS

I_D

R_DS(on)

T_vj= 25°C, I_D= 13A, V_GS= 18V

T_vj,max

Marking

Package

T_C= 25°C, R_th(j-c,max)

IMZ120R060M1H 1200V

36A

60mΩ

175°C

12M1H060

PG-TO247-4

Datasheet

Please read the Important Notice and Warnings at the end of this document

page 1 of 17

2.0

2019-08-22

www.infineon.com

12 3 4 5 6 7...17

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