品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | / | |
页数 | 文件大小 | 规格书 |
16页 | 1850K | |
描述 | ||
The CoolSiC™ 2000 V 24 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IMYH200R050M1H | INFINEON |
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The CoolSiC™ 2000 V 50 mΩ SiC MOSFET in TO-24 | |
IMYH200R075M1H | INFINEON |
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The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-24 | |
IMYH200R100M1H | INFINEON |
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The CoolSiC™ 2000 V 100 mΩ SiC MOSFET in TO-2 | |
IMZ1 | ETC |
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TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 100MA I(C) | SO | |
IMZ120R030M1H | INFINEON |
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IMZ120R030M1H是采用TO247-4封装的1200 V、30 mΩCoolSiC | |
IMZ120R045M1 | INFINEON |
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Power Field-Effect Transistor, | |
IMZ120R060M1H | INFINEON |
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Power Field-Effect Transistor, | |
IMZ120R090M1H | INFINEON |
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Power Field-Effect Transistor, | |
IMZ120R140M1H | INFINEON |
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IMZ120R140M1H是采用TO247-4封装的1200 V、140 mΩ CoolS | |
IMZ120R220M1H | INFINEON |
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Power Field-Effect Transistor, |