Datasheet > IMZ120R030M1H

IMZ120R030M1H

更新时间： 2024-09-17 11:14:39

品牌	Logo	应用领域
英飞凌 - INFINEON		开关栅 DC-DC转换器双极性晶体管功率因数校正二极管栅极半导体
页数	文件大小	规格书
17页	1274K
描述
IMZ120R030M1H是采用TO247-4封装的1200 V、30 mΩCoolSiC™ SiC MOSFET，它基于先进的沟槽半导体工艺，该工艺经过优化，兼具性能与可靠性。与IGBT和MOSFET等传统硅（Si）基开关相比，SiC MOSFET具有诸多优势，例如1200V级开关中最低的栅极电荷和器件电容电平、抗换向体二极管无反向恢复损耗、独立于温度的低开关损耗以及无阈值导通特性。因此，CoolSiC™ MOSFET非常适用于硬开关和谐振开关拓扑结构，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IMZ120R030M1H 数据手册

IMZ120R030M1H

CoolSiC™ 1200V SiC Trench MOSFET

Silicon Carbide MOSFET

Features

Drain

pin 1



Very low switching losses

Gate

pin 4

Threshold-free on state characteristic

Benchmark gate threshold voltage, V_GS(th)= 4.5V

0V turn-off gate voltage for easy and simple gate drive

Fully controllable dV/dt

Sense

pin 3

Source

pin 2

Robust body diode for hard commutation

Temperature independent turn-off switching losses

Sense pin for optimized switching performance

Benefits



Efficiency improvement

Enabling higher frequency

Increased power density

Cooling effort reduction

Reduction of system complexity and cost

Potential applications



Energy generation

Solar string inverter and solar optimizer



Industrial power supplies

Industrial UPS

Industrial SMPS



Infrastructure – Charge

Charger

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

Note:

the source and sense pins are not exchangeable, their exchange might lead to malfunction

Table 1

Type

Key Performance and Package Parameters

V_DS

I_D

R_DS(on)

T_vj= 25°C, I_D= 25A, V_GS= 18V

T_vj,max

Marking

Package

T_C= 25°C, R_th(j-c,max)

IMZ120R030M1H 1200V

56A

30mΩ

175°C

12M1H030

PG-TO247-4

Datasheet

Please read the Important Notice and Warnings at the end of this document

page 1 of 17

2.2

2020-12-11

www.infineon.com

12 3 4 5 6 7...17

中文翻译

下载PDF

与IMZ120R030M1H相关器件

型号	品牌	获取价格	描述	数据表
IMZ120R045M1	INFINEON	获取价格	Power Field-Effect Transistor,
IMZ120R060M1H	INFINEON	获取价格	Power Field-Effect Transistor,
IMZ120R090M1H	INFINEON	获取价格	Power Field-Effect Transistor,
IMZ120R140M1H	INFINEON	获取价格	IMZ120R140M1H是采用TO247-4封装的1200 V、140 mΩ CoolS
IMZ120R220M1H	INFINEON	获取价格	Power Field-Effect Transistor,
IMZ120R350M1H	INFINEON	获取价格	Power Field-Effect Transistor, 4.7A I(D), 1200V, 0.598ohm, 1-Element, N-Channel, Silicon C
IMZ1A	ROHM	获取价格	General purpose transistor (dual transistors)
IMZ1A	SWST	获取价格	小信号晶体管
IMZ1AFRAT108	ROHM	获取价格	Small Signal Bipolar Transistor,
IMZ1AFRAT110	ROHM	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), NPN and PNP