Datasheet > IMXPWSWP_D

IMXPWSWP_D

更新时间： 2024-11-25 23:58:39

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
10页	217K
描述
i.MX Application Processor Creating Power with Stamina White Paper White Paper

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

IMXPWSWP_D 数据手册

IMXPWSWP/D

Rev. 2, 09/2004

Freescale Semiconductor

White Paper

Creating Performance with Stamina for

Wireless Communications

By: Morris Moore, Nick Marshall, and Bobbi Bone

Executive Briefing

As we all take our first steps into a brave new world of

third generation mobile services, we are participating in

a revolutionary new way of conducting business, where

mobility no longer limits our productivity. We are no

longer tethered to a power outlet or confined to a few

square feet of office space. We see ourselves as having

all the power and sophistication of a hard-wired home or

office right in the palms of our hands. However, we also

know that mobile systems have an Achilles heel—a

mobile power source. No matter how powerful our

mobile systems become, the amount of work performed

is always limited by the life of the battery. That is why

low power consumption must be as important a design

consideration in mobile communications devices as

speed and ability, resulting in what we call performance

with stamina.

Now that we are entering a new realm of 3G deployment,

carrying broadband access around in our pockets,

wireless communication access and processing

capabilities are increasing dramatically, and the drain on

battery life is increasing right along with them.

This document contains informatin on a product under development. Freescale reserves the

right to change or discontinue this product without notice.

12 3 4 5 6 7...10

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
IMYH200R012M1H	INFINEON	获取价格	The CoolSiC™ 2000 V 12 mΩ SiC MOSFET in TO-24
IMYH200R024M1H	INFINEON	获取价格	The CoolSiC™ 2000 V 24 mΩ SiC MOSFET in TO-24
IMYH200R050M1H	INFINEON	获取价格	The CoolSiC™ 2000 V 50 mΩ SiC MOSFET in TO-24
IMYH200R075M1H	INFINEON	获取价格	The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-24
IMYH200R100M1H	INFINEON	获取价格	The CoolSiC™ 2000 V 100 mΩ SiC MOSFET in TO-2
IMZ1	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 40V V(BR)CEO \| 100MA I(C) \| SO
IMZ120R030M1H	INFINEON	获取价格	IMZ120R030M1H是采用TO247-4封装的1200 V、30 mΩCoolSiC
IMZ120R045M1	INFINEON	获取价格	Power Field-Effect Transistor,
IMZ120R060M1H	INFINEON	获取价格	Power Field-Effect Transistor,
IMZ120R090M1H	INFINEON	获取价格	Power Field-Effect Transistor,