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IMX8_2

更新时间： 2024-11-25 11:20:03
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 118K
描述
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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IMX8_2 数据手册

 浏览型号IMX8_2的Datasheet PDF文件第2页浏览型号IMX8_2的Datasheet PDF文件第3页 
IMX8  
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
•
Epitaxial Planar Die Construction  
Complementary PNP Type Available (IMT4)  
Small Surface Mount Package  
Lead Free/RoHS Compliant (Note 3)  
"Green" Device, Note 4 and 5  
A
SOT-26  
B2  
B1  
E1  
Dim Min Max Typ  
A
B
C
D
F
0.35 0.50 0.38  
1.50 1.70 1.60  
2.70 3.00 2.80  
C
B
C2  
E2  
C1  
Mechanical Data  
0.95  
0.55  
⎯
⎯
⎯
⎯
•
•
Case: SOT-26  
H
Case Material: Molded Plastic, "Green" Molding  
Compound, Note 5. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over  
Copper leadframe).  
H
J
2.90 3.10 3.00  
0.013 0.10 0.05  
1.00 1.30 1.10  
0.35 0.55 0.40  
0.10 0.20 0.15  
K
J
M
•
•
•
•
K
L
F
L
D
M
α
B2  
B1  
E1  
0°  
8°  
⎯
•
•
•
Marking Information: KX8, See Page 3  
Ordering & Date Code Information: See Page 3  
Weight: 0.016 grams (approximate)  
All Dimensions in mm  
C2  
E2  
C1  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current - Continuous  
Power Dissipation (Note 1)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
120  
120  
5.0  
50  
300  
417  
Unit  
V
V
V
mA  
mW  
Pd  
Thermal Resistance, Junction to Ambient (Note 1)  
°C/W  
°C  
Rθ  
JA  
Operating and Storage Temperature Range  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
120  
120  
5.0  
⎯
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.5  
0.5  
IC = 50μA  
IC = 1.0mA  
IE = 50μA  
VCB = 100V  
VEB = 4.0V  
μA  
μA  
Emitter Cutoff Current  
IEBO  
⎯
ON CHARACTERISTICS (Note 2)  
DC Current Gain  
Collector-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
180  
820  
0.5  
hFE  
VCE(SAT)  
⎯
⎯
⎯
V
IC = 2.0mA, VCE = 6.0V  
IC = 10mA, IB = 1.0mA  
⎯
VCE = 12V, IC = 2.0mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
140  
MHz  
fT  
⎯
⎯
Notes:  
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30304 Rev. 8 - 2  
1 of 3  
IMX8  
© Diodes Incorporated  
www.diodes.com  
123

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