Datasheet > IMB6A

IMB6A

更新时间： 2024-09-08 23:58:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
1页	28K
描述
TRANSISTOR \| 50V V(BR)CEO \| 30MA I(C) \| SO

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中文翻译

获取价格

数据手册

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IMB6A 数据手册

EMB6 / UMB6N / IMB6A

Transistors

General purpose (dual digital transistors)

EMB6 / UMB6N / IMB6A

zExternal dimensions (Units : mm)

zFeatures

1) Two DTA144E chips in a EMT or UMT or SMT

package.

EMB6

( )

1.2

1.6

zEquivalent circuit

EMB6 / UMB6N

IMB6A

Each lead has same dimensions

(3)

(2)

(1)

(4)

(5)

(6)

ROHM : EMT6

UMB6N

(4) (5)

(6)

(3) (2)

(1)

1.25

2.1

zPackage, marking, and packaging specifications

Type

Package

EMB6

EMT6

UMB6N

UMT6

IMB6A

SMT6

0.1Min.

Each lead has same dimensions

Marking

ROHM : UMT6

EIAJ : SC-88

Code

T2R

T110

3000

Basic ordering unit (pieces)

8000

3000

IMB6A

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Supply voltage

Symbol

Limits

−50

Unit

1.6

2.8

VCC

−40

Input voltage

VIN

Output current

Power dissipation

0.3to0.6

EMB6 / UMB6N

IMB6A

150(TOTAL)

300(TOTAL)

150

Each lead has same dimensions

Junction temperature

Storage temperature

°C

ROHM : SMT6

EIAJ : SC-74

Tstg

−55~+150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

zElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

−

Max.

−0.5

−

Conditions

Unit

I (off)

−

−3.0

−

CC=−5V, I

=−0.3V, I

=−10mA, I

=−5V

CC=−50V, V

=−5mA, V =−5V

=−100µA

Input voltage

VI (on)

−

=−2mA

Output voltage

Input current

VO (on)

−0.1

−

−0.3

−0.18

−0.5

−

µA

−

=−0.5mA

−

Output current

DC current gain

Input resistance

Resistance ratio

O (off)

−

I=0V

32.9

0.8

−

1.0

250

61.1

1.2

kΩ

−

/ R1

−

Transition frequency

−

MHz

CE=−10V, I

=5mA, f=100MHz

Transition frequency of the device.

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