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IMBD4148/E9 PDF预览

IMBD4148/E9

更新时间: 2024-09-14 15:35:07
品牌 Logo 应用领域
威世 - VISHAY 快速恢复二极管测试光电二极管
页数 文件大小 规格书
5页 101K
描述
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM),

IMBD4148/E9 技术参数

生命周期:Active包装说明:R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.74
应用:FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3最大非重复峰值正向电流:0.5 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.35 W最大重复峰值反向电压:100 V
最大反向电流:2.5 µA最大反向恢复时间:0.004 µs
反向测试电压:70 V子类别:Rectifier Diodes
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

IMBD4148/E9 数据手册

 浏览型号IMBD4148/E9的Datasheet PDF文件第2页浏览型号IMBD4148/E9的Datasheet PDF文件第3页浏览型号IMBD4148/E9的Datasheet PDF文件第4页浏览型号IMBD4148/E9的Datasheet PDF文件第5页 
IMBD4148  
Vishay Semiconductors  
VISHAY  
Small Signal Switching Diode  
Features  
• Silicon Epitaxial Planar Diodes  
3
• Fast switching diode in case SOT-23, especially  
suited for automatic insertion.  
• This diodes are also available in other case styles  
including: the DO-35 case with the type designa-  
tion 1N4148, the Mini-MELF case with the type  
designation LL4148, and the SOD-123 case with  
the type designation 1N4148W.  
1
2
16923  
Mechanical Data  
Case: SOT-23 Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
IMBD4148  
IMBD4148-GS18 or IMBD4148-GS08  
A2  
Tape and Reel  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
75  
Unit  
Reverse voltage  
V
V
V
R
Peak reverse voltage  
V
100  
RM  
1)  
Rectified current (average) half  
wave rectification with resist.  
T
= 25 °C, f 50 Hz  
I
mA  
amb  
F(AV)  
150  
Surge forward current  
Power dissipation  
t < 1 s, T = 25 °C  
I
500  
mA  
j
FSM  
1)  
up to T  
= 25 °C  
P
mW  
amb  
tot  
350  
1)  
Device on fiberglass substrate, see layout (SOT-23).  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to  
ambient air  
R
°C/W  
thJA  
450  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
- 65 to + 150  
S
1)  
Device on fiberglass substrate, see layout (SOT-23).  
Document Number 85731  
Rev. 1.4, 08-Jul-04  
www.vishay.com  
1

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