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IMBD4448-E3-08 PDF预览

IMBD4448-E3-08

更新时间: 2024-11-25 14:51:31
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
5页 99K
描述
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3

IMBD4448-E3-08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:12 weeks风险等级:5.18
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.35 W
最大重复峰值反向电压:100 V最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

IMBD4448-E3-08 数据手册

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IMBD4448  
Vishay Semiconductors  
www.vishay.com  
Small Signal Switching Diode  
FEATURES  
• Silicon epitaxial planar diode  
3
• Fast switching diode in case SOT-23, especially  
suited for automatic insertion.  
• AEC-Q101 qualified  
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
1
2
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOT-23  
Weight: approx. 8.8 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
INTERNAL CONSTRUCTION  
TYPE MARKING  
REMARKS  
IMBD4448-E3-08 or IMBD4448-E3-18  
IMBD4448-HE3-08 or IMBD4448-HE3-18  
IMBD4448  
Single diode  
A3  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
75  
UNIT  
Reverse voltage  
Peak reverse voltage  
VR  
V
V
VRM  
100  
Rectified current (average) half wave  
rectification with resistive load (1)  
f 50 Hz  
IF(AV)  
150  
mA  
Surge forward current  
Power dissipation (1)  
t < 1 s and TJ = 25 °C  
IFSM  
Ptot  
500  
350  
mA  
mW  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
450  
UNIT  
K/W  
°C  
Junction temperature  
150  
Storage temperature range  
Operating temperature range  
Tstg  
- 65 to + 150  
- 55 to + 150  
°C  
Top  
°C  
Note  
(1)  
Device on fiberglass substrate, see layout on next page.  
Rev. 1.6, 15-May-13  
Document Number: 85732  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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