Datasheet > IMBG120R026M2H

IMBG120R026M2H

更新时间： 2024-04-09 19:00:17

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
17页	1296K
描述
这款第二代1200 V、26 mΩ?CoolSiC? MOSFET采用D2PAK-7L（TO-263-7）封装，它在第一代技术优势的基础上进行了改进，可加快系统设计，提供更经济、高效、紧凑且可靠的

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IMBG120R026M2H 数据手册

IMBG120R026M2H

CoolSiC^™1200 V SiC MOSFET G2

Final datasheet

CoolSiC^™1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features

• V_DSS= 1200 V at T_vj= 25°C

• I_DDC= 53 A at T_C= 100°C

• R_DS(on)= 25.4 mΩ at V_GS= 18 V, T_vj= 25°C

• Very low switching losses

• Overload operation up to T_vj= 200°C

• Short circuit withstand time 2 µs

• Benchmark gate threshold voltage, V_GS(th)= 4.2 V

• Robust against parasitic turn on, 0 V turn-oﬀ gate voltage can be applied

• Robust body diode for hard commutation

• .XT interconnection technology for best-in-class thermal performance

• Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder

Potential applications

• EV-Charging

• Online UPS/Industrial UPS

• Solar power optimizer

• String inverter

• General purpose drives (GPD)

Product validation

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Description

Pin definition:

• Pin 1 - Gate

• Pin 2 - Kelvin sense contact

• Pin 3…7 - Source

• Tab - Drain

Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L )

Type

Package

Marking

IMBG120R026M2H

PG-TO263-7-HV-ND5.8

12M2H026

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.10

2024-01-12

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