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IMBD4448-V PDF预览

IMBD4448-V

更新时间: 2024-11-25 05:39:15
品牌 Logo 应用领域
威世 - VISHAY 小信号开关二极管
页数 文件大小 规格书
6页 118K
描述
Small Signal Switching Diode

IMBD4448-V 数据手册

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IMBD4448-V  
Vishay Semiconductors  
Small Signal Switching Diode  
Features  
• Silicon Epitaxial Planar Diodes  
3
• Fast switching diode in case SOT-23,  
e3  
especially suited for automatic insertion.  
• This diodes are also available in other  
case styles including: the DO-35 case with the  
type  
1
2
16923  
designation 1N4448, the Mini-MELF case with the  
type designation LL4448, and the SOD-123 case  
with the type designation 1N4448W-V.  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Case: SOT-23 Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
IMBD4448-V  
IMBD4448-V-GS18 or IMBD4448-V-GS08  
A3  
Tape and Reel  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Reverse voltage  
Test condition  
Symbol  
VR  
Value  
75  
Unit  
V
V
Peak reverse voltage  
VRM  
100  
1501)  
Rectified current (average) half  
wave rectification with resist.  
T
amb = 25 °C and f 50 Hz  
IF(AV)  
mA  
Surge forward current  
Power dissipation  
t < 1 s and Tj = 25 °C  
amb = 25 °C  
IFSM  
Ptot  
500  
mA  
3501)  
T
mW  
1) Device on fiberglass substrate, see layout (SOT-23).  
Document Number 85732  
Rev. 1.4, 07-Apr-05  
www.vishay.com  
1

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