IMBG65R020M2H
MOSFET
PG-TO263-7
CoolSiCªꢀMOSFETꢀ650ꢀVꢀG2
BuiltꢀonꢀInfineon’sꢀrobustꢀ2ndꢀgenerationꢀSiliconꢀCarbideꢀtrenchꢀtechnology,
theꢀ650ꢀVꢀCoolSiC™ꢀMOSFETꢀdeliversꢀunparalleledꢀperformance,
superiorꢀreliability,ꢀandꢀgreatꢀeaseꢀofꢀuse.ꢀItꢀenablesꢀcostꢀeffective,ꢀhighly
efficient,ꢀandꢀsimplifiedꢀdesignsꢀtoꢀfulfillꢀtheꢀever-growingꢀsystemꢀand
marketꢀneeds.
Tab
1
2
3
4
5
Features
6
7
•ꢀUltra-lowꢀswitchingꢀlosses
•ꢀBenchmarkꢀgateꢀthresholdꢀvoltage,ꢀVGS(th)ꢀ=ꢀ4.5ꢀV
•ꢀRobustꢀagainstꢀparasiticꢀturn-onꢀevenꢀwithꢀ0ꢀVꢀturn-offꢀgateꢀvoltage
•ꢀFlexibleꢀdrivingꢀvoltageꢀandꢀcompatibleꢀwithꢀbipolarꢀdrivingꢀscheme
•ꢀRobustꢀbodyꢀdiodeꢀoperationꢀunderꢀhardꢀcommutationꢀevents
•ꢀ.XTꢀinterconnectionꢀtechnologyꢀforꢀbest-in-classꢀthermalꢀperformance
Drain
Tab
*1
Gate
Pin 1
Benefits
Driver
Source
Pin 2
•ꢀEnablesꢀhighꢀefficiencyꢀandꢀhighꢀpowerꢀdensityꢀdesigns
•ꢀFacilitatesꢀgreatꢀeaseꢀofꢀuseꢀandꢀintegration
•ꢀProvidesꢀtheꢀbestꢀpriceꢀperformanceꢀratioꢀcomparedꢀtoꢀIndustry’sꢀmost
ambitiousꢀroadmaps
Power
Source
Pin 3-7
*1: Internal body diode
•ꢀReducesꢀtheꢀsize,ꢀweightꢀandꢀbillꢀofꢀmaterialsꢀofꢀtheꢀsystems
•ꢀEnhancesꢀsystemꢀrobustnessꢀandꢀreliability
Potentialꢀapplications
•ꢀSMPS
•ꢀSolarꢀPVꢀinverters
•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation
•ꢀUPS
•ꢀEVꢀchargingꢀinfrastructure
•ꢀMotorꢀdrives
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀdriverꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.
Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDSSꢀoverꢀfullꢀTj,range
RDS(on),typ
Value
650
20
Unit
V
mΩ
mΩ
nC
A
RDS(on),max
24
QG,typ
57
ID,pulse
292
108
14.7
Qossꢀ@ꢀ400ꢀV
Eossꢀ@ꢀ400ꢀV
nC
µJ
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
65R020M2
RelatedꢀLinks
IMBG65R020M2H
PG-TO263-7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2024-03-05