Datasheet > IMBG120R045M1H

IMBG120R045M1H

更新时间： 2023-09-03 20:33:59

品牌	Logo	应用领域
英飞凌 - INFINEON		电机驱动
页数	文件大小	规格书
17页	1256K
描述
是采用D2PAK-7L (TO-263-7)封装的1200 V, 45 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。

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数据手册

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IMBG120R045M1H 数据手册

IMBG120R045M1H

CoolSiC™ 1200V SiC Trench MOSFET

with .XT interconnection technology

Features



Very low switching losses

Drain

TAB

Short circuit withstand time 3 µs

Fully controllable dV/dt

Gate

pin 1

Benchmark gate threshold voltage, V_GS(th)= 4.5V

Robust against parasitic turn on, 0V turn-off gate voltage can be applied

Robust body diode for hard commutation

.XT interconnection technology for best-in-class thermal performance

Package creepage and clearance distance > 6.1mm

Sense pin for optimized switching performance

Sense

pin 2

Source

pin 3...7

Benefits



Efficiency improvement

Enabling higher frequency

Increased power density

Cooling effort reduction

Reduction of system complexity and cost

Potential applications



Drives

Infrastructure – Charger

Energy generation - Solar string inverter and solar optimizer

Industrial power supplies - Industrial UPS

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

Note:

the source and sense pins are not exchangeable, their exchange might lead to malfunction

Table 1

Type

Key Performance and Package Parameters

V_DS

I_D

R_DS(on

T_vj= 25°C, I_D= 16A, V_GS= 18V

T_vj,max

Marking

Package

PG-TO263-7

T_C= 25°C, R_th(j-c,max)

IMBG120R045M1H 1200V

47A

45mΩ

175°C

12M1H045

Final Datasheet

Please read the Important Notice and Warnings at the end of this document

page 1 of 17

2.2

2020-12-11

www.infineon.com

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