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IMBD4148/E8 PDF预览

IMBD4148/E8

更新时间: 2024-09-14 19:56:55
品牌 Logo 应用领域
威世 - VISHAY 快速恢复二极管测试光电二极管
页数 文件大小 规格书
4页 150K
描述
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM),

IMBD4148/E8 技术参数

生命周期:Active包装说明:SOT-23, 3 PIN
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.74
应用:FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3最大非重复峰值正向电流:0.5 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.35 W最大重复峰值反向电压:100 V
最大反向电流:2.5 µA最大反向恢复时间:0.004 µs
反向测试电压:70 V子类别:Rectifier Diodes
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

IMBD4148/E8 数据手册

 浏览型号IMBD4148/E8的Datasheet PDF文件第2页浏览型号IMBD4148/E8的Datasheet PDF文件第3页浏览型号IMBD4148/E8的Datasheet PDF文件第4页 
IMBD4148  
Small-Signal Diode  
Mounting Pad Layout  
0.031 (0.8)  
TO-236AB (SOT-23)  
.122 (3.1)  
.110 (2.8)  
0.035 (0.9)  
.016 (0.4)  
Top View  
3
0.079 (2.0)  
1
2
0.037 (0.95)  
0.037 (0.95)  
.037(0.95)  
.037(0.95)  
Features  
Silicon Epitaxial Planar Diodes  
Fast switching diode in case SOT-23, especially  
suited for automatic insertion.  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
This diodes are also available in other case  
styles including: the DO-35 case with the type  
designation 1N4148, the Mini-MELF case with the  
type designation LL4148, and the SOD-123 case  
with the type designation 1N4148W.  
Dimensions in inches and (millimeters)  
Marking  
A2  
Mechanical Data  
Case: SOT-23 Plastic Package  
Top View  
Weight: approx. 0.008g  
Packaging Codes/Options:  
E8/10K per 13reel (8mm tape), 30K/box  
E9/3K per 7reel (8mm tape), 30K/box  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
V
Reverse Voltage  
Peak Reverse Voltage  
VR  
75  
VRM  
100  
V
Rectified Current (Average) Half Wave Rectification with  
Resist. Load at Tamb = 25°C and f 50Hz  
IF(AV)  
150(1)  
mA  
Surge Forward Current at t < 1s and Tj = 25°C  
Power Dissipation up to Tamb = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
IFSM  
Ptot  
RθJA  
Tj  
500  
350(1)  
mA  
mW  
°C/W  
°C  
450(1)  
150  
Storage Temperature Range  
TS  
–65 to +150  
°C  
Note:  
(1) Device on fiberglass substrate, see layout on next page.  
7/19/01  

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