型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IKW30N60DTP | INFINEON |
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IGBT TRENCHSTOP? Perf. | |
IKW30N60DTPXKSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 53A I(C), 600V V(BR)CES, N-Channel, TO-247, | |
IKW30N60H3 | INFINEON |
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High speed Duopack : IGBT in Trench and Fieldstop technology | |
IKW30N60T | INFINEON |
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Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-p | |
IKW30N60TA | INFINEON |
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Insulated Gate Bipolar Transistor, | |
IKW30N65ES5 | INFINEON |
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high Speed soft switching IGBT with full current rated RAPID 1 diode | |
IKW30N65ES5_15 | INFINEON |
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high Speed soft switching IGBT with full current rated RAPID 1 diode | |
IKW30N65ET7 | INFINEON |
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TRENCHSTOP™ IGBT7 | |
IKW30N65H5 | INFINEON |
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IGBT TRENCHSTOP™ 5 | |
IKW30N65WR5 | INFINEON |
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Reverse conducting IGBT with monolithic body diode |