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IHW20T120 PDF预览

IHW20T120

更新时间: 2024-11-19 22:33:43
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
14页 322K
描述
Soft Switching Series

IHW20T120 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AC
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.81外壳连接:COLLECTOR
最大集电极电流 (IC):40 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:6.5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):178 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):790 ns标称接通时间 (ton):82 ns
Base Number Matches:1

IHW20T120 数据手册

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IHW20T120  
Soft Switching Series  
Low Loss DuoPack : IGBT in Trench and Fieldstop technology  
with soft, fast recovery anti-parallel EmCon HE diode  
Short circuit withstand time – 10µs  
Designed for :  
- Soft Switching Applications  
- Induction Heating  
C
E
Trench and Fieldstop technology for 1200 V applications offers :  
- very tight parameter distribution  
- high ruggedness, temperature stable behavior  
- easy parallel switching capability due to positive  
temperature coefficient in VCE(sat)  
G
Very soft, fast recovery anti-parallel EmConHE diode  
Low EMI  
Application specific optimisation of inverse diode  
Type  
VCE  
IC  
VCE(sat),Tj=25°C  
Tj,max  
Marking  
Package  
Ordering Code  
IHW20T120  
1200V  
20A  
1.7V  
H20T120 TO-247AC Q67040-S4652  
150°C  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
DC collector current  
TC = 25°C  
VCE  
IC  
1200  
V
A
40  
20  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax  
Turn off safe operating area  
ICpuls  
-
60  
60  
V
CE 1200V, Tj 150°C  
Diode forward current  
IF  
23  
13  
TC = 25°C  
TC = 100°C  
Diode pulsed current, tp limited by Tjmax  
Diode surge non repetitive current, tp limited by Tjmax  
TC = 25°C, tp = 10ms, sine halfwave  
TC = 25°C, tp 2.5µs, sine halfwave  
TC = 100°C, tp 2.5µs, sine halfwave  
Gate-emitter voltage  
IFpuls  
IFSM  
36  
A
50  
130  
120  
VGE  
tSC  
V
±20  
10  
Short circuit withstand time1)  
VGE = 15V, VCC 1200V, Tj 150°C  
Power dissipation, TC = 25°C  
Operating junction temperature  
Storage temperature  
µs  
Ptot  
Tj  
178  
W
-40...+150  
-55...+150  
260  
°C  
°C  
Tstg  
-
Soldering temperature, 1.6mm (0.063 in.) from case for 10s  
1) Allowed number of short circuits: <1000; time between short circuits: >1s.  
1
Rev. 2  
Apr-04  
Power Semiconductors  

IHW20T120 替代型号

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