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IHW30N120R2 PDF预览

IHW30N120R2

更新时间: 2024-10-01 03:43:59
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管双极性晶体管
页数 文件大小 规格书
12页 386K
描述
Reverse Conducting IGBT with monolithic body diode

IHW30N120R2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:GREEN, PLASTIC, TO-247, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.75
外壳连接:COLLECTOR最大集电极电流 (IC):60 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:6.4 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):390 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称断开时间 (toff):900 ns

IHW30N120R2 数据手册

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IHW30N120R2  
Soft Switching Series  
Reverse Conducting IGBT with monolithic body diode  
C
Features:  
Powerful monolithic Body Diode with very low forward voltage  
Body diode clamps negative voltages  
Trench and Fieldstop technology for 1200 V applications offers :  
- very tight parameter distribution  
G
E
- high ruggedness, temperature stable behavior  
NPT technology offers easy parallel switching capability due to  
positive temperature coefficient in VCE(sat)  
Low EMI  
Qualified according to JEDEC1 for target applications  
Pb-free lead plating; RoHS compliant  
PG-TO-247-3-21  
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/  
Applications:  
Inductive Cooking  
Soft Switching Applications  
Type  
VCE  
IC  
VCE(sat),Tj=25°C  
Tj,max  
Marking  
Package  
IHW30N120R2  
Maximum Ratings  
Parameter  
1200V  
30A  
1.65V  
H30R1202  
PG-TO-247-3-21  
175°C  
Symbol  
Value  
Unit  
Collector-emitter voltage  
VCE  
IC  
1200  
V
A
DC collector current  
TC = 25°C  
60  
30  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax  
Turn off safe operating area (VCE 1200V, Tj 175°C)  
Diode forward current  
ICpul s  
-
IF  
90  
90  
60  
30  
TC = 25°C  
TC = 100°C  
Diode pulsed current, tp limited by Tjmax  
IFpul s  
IFSM  
90  
Diode surge non repetitive current, tp limited by Tjmax  
TC = 25°C, tp = 10ms, sine halfwave  
TC = 25°C, tp 2.5µs, sine halfwave  
TC = 100°C, tp 2.5µs, sine halfwave  
50  
130  
120  
Gate-emitter voltage  
Transient Gate-emitter voltage (tp < 5 ms)  
VG E  
V
±20  
±25  
Pt ot  
Tj  
Tstg  
-
390  
W
Power dissipation TC = 25°C  
Operating junction temperature  
Storage temperature  
Soldering temperature, 1.6mm (0.063 in.) from case for 10s  
-40...+175  
-55...+175  
260  
°C  
1 J-STD-020 and JESD-022  
1
Rev. 1.2 May 06  
Power Semiconductors  

IHW30N120R2 替代型号

型号 品牌 替代类型 描述 数据表
IHW30N120R INFINEON

完全替代

IGBT with monolithic body diode for soft switching Applications
STGW38IH130D STMICROELECTRONICS

功能相似

33 A - 1300 V - very fast IGBT

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