Datasheet > IHW30N65R6

IHW30N65R6

更新时间： 2024-11-19 11:15:11

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IHW30N65R6 数据手册

IHW30N65R6

Reverse-Conducting IGBT

Reverse-Conducting IGBT with monolithic body diode

Features

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

• Easy parallel switching capability due to positive temperature coeﬀicient in V_CEsat

• High ruggedness and stable temperature behavior

• Low EMI

• Pb-free lead plating; RoHS compliant

• Powerful monolithic reverse-conducting diode with low forward voltage

• Very low V_CEsatand low E_oﬀ

• Very tight parameter distribution

Potential applications

• Induction Cooking

• Microwave Ovens

Product validation

• Product Validation: Qualified for industrial applications according to the relevant tests of

JEDEC47/20/22

Description

Type

Package

Marking

IHW30N65R6

PG-TO247-3

H30ER6

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

Revision 1.20

2021-03-22

12 3 4 5 6 7...16

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