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IGB15N60T PDF预览

IGB15N60T

更新时间: 2024-11-07 21:55:31
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
12页 365K
描述
Low Loss IGBT in Trench and Fieldstop technology

IGB15N60T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:GREEN, PLASTIC, TO-263, 3 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:1.41外壳连接:COLLECTOR
最大集电极电流 (IC):30 A集电极-发射极最大电压:600 V
配置:SINGLE门极发射器阈值电压最大值:5.7 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):130 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):291 ns
标称接通时间 (ton):32 ns

IGB15N60T 数据手册

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IGB15N60T  
q
TrenchStop Series  
Low Loss IGBT in Trench and Fieldstop technology  
C
Very low VCE(sat) 1.5 V (typ.)  
Maximum Junction Temperature 175 °C  
Short circuit withstand time – 5µs  
Designed for :  
G
E
- Frequency Converters  
- Uninterrupted Power Supply  
Trench and Fieldstop technology for 600 V applications offers :  
- very tight parameter distribution  
P-TO-263-3-2 (D²-PAK)  
(TO-263AB)  
- high ruggedness, temperature stable behavior  
- very high switching speed  
- low VCE(sat)  
Positive temperature coefficient in VCE(sat)  
Low EMI  
Low Gate Charge  
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/  
Type  
VCE  
IC  
VCE(sat),Tj=25°C  
Tj,max  
Marking Code Package  
Ordering Code  
Q67040S4720  
IGB15N60T  
600V  
15A  
1.5V  
G15T60  
TO-263  
175°C  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
DC collector current, limited by Tjmax  
TC = 25°C  
VCE  
IC  
600  
V
A
30  
15  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax  
ICpuls  
-
VGE  
tSC  
45  
45  
±20  
5
Turn off safe operating area (VCE 600V, Tj 175°C)  
Gate-emitter voltage  
V
Short circuit withstand time1)  
µs  
V
GE = 15V, VCC 400V, Tj 150°C  
Ptot  
Tj  
Tstg  
-
130  
W
Power dissipation TC = 25°C  
Operating junction temperature  
Storage temperature  
Soldering temperature, 1.6mm (0.063 in.) from case for 10s  
-40...+175  
-55...+175  
260  
°C  
1) Allowed number of short circuits: <1000; time between short circuits: >1s.  
1
Rev. 2.1 Dec-04  
Power Semiconductors  

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