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IDT71V256SA10YI8 PDF预览

IDT71V256SA10YI8

更新时间: 2024-11-16 14:51:27
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 86K
描述
Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, SOJ-28

IDT71V256SA10YI8 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ, SOJ28,.34
针数:28Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.2Is Samacsys:N
最长访问时间:10 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-J28JESD-609代码:e0
长度:17.9324 mm内存密度:262144 bit
内存集成电路类型:CACHE SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ28,.34封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:3.3 V
认证状态:Not Qualified座面最大高度:3.556 mm
最大待机电流:0.002 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.1 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:7.5184 mm
Base Number Matches:1

IDT71V256SA10YI8 数据手册

 浏览型号IDT71V256SA10YI8的Datasheet PDF文件第2页浏览型号IDT71V256SA10YI8的Datasheet PDF文件第3页浏览型号IDT71V256SA10YI8的Datasheet PDF文件第4页浏览型号IDT71V256SA10YI8的Datasheet PDF文件第5页浏览型号IDT71V256SA10YI8的Datasheet PDF文件第6页浏览型号IDT71V256SA10YI8的Datasheet PDF文件第7页 
Lower Power  
IDT71V256SA  
3.3V CMOS Fast SRAM  
256K (32K x 8-Bit)  
Features  
Description  
Ideal for high-performance processor secondary cache  
Commercial (0°C to +70°C) and Industrial (–40°C to +85°C)  
temperature range options  
TheIDT71V256SAisa 262,144-bithigh-speedstaticRAMorganized  
as32Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliability  
CMOStechnology.  
Fast access times:  
TheIDT71V256SAhasoutstandinglowpowercharacteristicswhile  
at the same time maintaining very high performance. Address access  
times of as fast as 10ns are ideal for 3.3V secondary cache in 3.3V  
desktopdesigns.  
Whenpowermanagementlogicputs the IDT71V256SAinstandby  
mode,itsverylowpowercharacteristicscontributetoextendedbatterylife.  
BytakingCSHIGH,theSRAMwillautomaticallygotoalowpowerstandby  
modeandwillremaininstandbyaslongasCSremainsHIGH.Further-  
more,underfullstandbymode(CSatCMOSlevel,f=0),powerconsump-  
tionisguaranteedtoalwaysbelessthan6.6mWandtypicallywillbemuch  
smaller.  
– CommercialandIndustrial:10/12/15/20ns  
Low standby current (maximum):  
– 2mAfullstandby  
Small packages for space-efficient layouts:  
– 28-pin 300 mil SOJ  
– 28-pin TSOP Type I  
Produced with advanced high-performance CMOS  
technology  
Inputs and outputs are LVTTL-compatible  
Single 3.3V(±0.3V) power supply  
TheIDT71V256SAispackagedina28-pin300milSOJanda28-pin  
300 mil TSOP Type I.  
FunctionalBlockDiagram  
A0  
VCC  
GND  
262,144 BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A14  
I/O0  
I/O CONTROL  
INPUT  
DATA  
CIRCUIT  
I/O7  
,
CS  
OE  
CONTROL  
CIRCUIT  
3101 drw 01  
WE  
JUNE 2002  
1
DSC-3101/07  
©2000IntegratedDeviceTechnology,Inc.  

IDT71V256SA10YI8 替代型号

型号 品牌 替代类型 描述 数据表
IDT71V256SA10YI IDT

完全替代

Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
IDT71V256SA10YGI IDT

完全替代

Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, SOJ-28

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IDT71V256SA12YG8 IDT

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Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)