生命周期: | Obsolete | 包装说明: | FBGA, BGA48,6X8,30 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最长访问时间: | 85 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PBGA-B48 | 内存密度: | 33554432 bit |
内存宽度: | 16 | 端子数量: | 48 |
字数: | 2097152 words | 字数代码: | 2000000 |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 2MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA48,6X8,30 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 电源: | 1.8,1.8/3 V |
认证状态: | Not Qualified | 最大待机电流: | 0.000025 A |
子类别: | Other Memory ICs | 最大压摆率: | 0.017 mA |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.75 mm | 端子位置: | BOTTOM |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HYE18P32161AC-L85 | INFINEON |
获取价格 |
暂无描述 |
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HYE18P64160AF-12.5 | QIMONDA |
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Pseudo Static RAM, 4MX16, CMOS, PBGA54, GREEN, PLASTIC, VFBGA-54 |
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HYE25L128160AC-7.5 | INFINEON |
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BJAWBMSpecialty DRAMs Mobile-RAM |
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HYE25L128160AC-7.5* | ETC |
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?128M (8Mx16) 133MHz 3-3-3 Ext. Temp ? |
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HYE25L128160AC-75 | INFINEON |
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128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES |
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HYE25L128160AC-8 | INFINEON |
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128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES |
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HYE25L128160AC-8* | ETC |
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?128M (8Mx16) 125MHz 2-2-2 Ext. Temp. ? |
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HYE25L128800AC-7.5 | INFINEON |
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Synchronous DRAM, 16MX8, 5.4ns, CMOS, PBGA54, 9 X 8 MM, FBGA-54 |
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HYE25L128800AC-8 | INFINEON |
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Synchronous DRAM, 16MX8, 6ns, CMOS, PBGA54, 9 X 8 MM, FBGA-54 |
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HYE25L256160AC | INFINEON |
获取价格 |
256-Mbit Mobile-RAM |
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