5秒后页面跳转
HYG011N03LR1B6 PDF预览

HYG011N03LR1B6

更新时间: 2024-03-03 10:08:30
品牌 Logo 应用领域
华羿微 - HUAYI 电池开关电机驱动
页数 文件大小 规格书
9页 809K
描述
此器件为 N 沟道、30V耐压、0.9mΩ内阻、TO-263-6L封装产品,芯片采用Trench工艺设计。该器件抗冲击能力强,适合较低开关频率应用,可满足电机驱动/电池保护/电动工...

HYG011N03LR1B6 数据手册

 浏览型号HYG011N03LR1B6的Datasheet PDF文件第2页浏览型号HYG011N03LR1B6的Datasheet PDF文件第3页浏览型号HYG011N03LR1B6的Datasheet PDF文件第4页浏览型号HYG011N03LR1B6的Datasheet PDF文件第5页浏览型号HYG011N03LR1B6的Datasheet PDF文件第6页浏览型号HYG011N03LR1B6的Datasheet PDF文件第7页 
HYG011N03LR1B6  
N-Channel Enhancement Mode MOSFET  
Feature  
Pin Description  
30V/310A  
RDS(ON)= 0.9 mΩ(typ.)@VGS = 10V  
RDS(ON)= 1.25 mΩ(typ.)@VGS = 4.5V  
100% Avalanche Tested  
Reliable and Rugged  
Pin7  
Lead Free and Green Devices Available  
(RoHS Compliant)  
Pin1  
TO-263-6L  
Pin4  
Applications  
Pin1  
Switch application  
Brushless Motor Drive  
DC-DC  
Pin2,3,5,6,7  
Electric Power Steering  
N-Channel MOSFET  
Ordering and Marking Information  
Package Code  
B6:TO-263-6L  
B6  
G011N03  
XYMXXXXXX  
Date Code  
XYMXXXXXX  
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-  
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-  
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines Green”  
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous  
material and total of Br and Cl does not exceed 1500ppm by weight).  
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr  
-oduct and/or to this document at any time without notice.  
www.hymexa.com  
V1.0  
1

与HYG011N03LR1B6相关器件

型号 品牌 获取价格 描述 数据表
HYG013N04NA1B HUAYI

获取价格

此器件为40V、1.5mΩ、TO-263-2L封装产品,采用Trench流片工艺,该器件适
HYG013N04NA1B6 HUAYI

获取价格

此器件为40V、1.1mΩ、TO-263-6L封装产品,采用Trench流片工艺,该器件适
HYG015N03LR1C2 HUAYI

获取价格

BMS
HYG015N03LR1P HUAYI

获取价格

此器件为 N 沟道、30V耐压、1.8mΩ内阻、TO-220FB-3L封装产品,芯片采用T
HYG020N04NA1B HUAYI

获取价格

此器件为40V、1.8mΩ、TO-263-2L封装产品,采用Trench流片工艺,该器件适
HYG020N04NA1PL HUAYI

获取价格

此器件为40V、1.8mΩ、TO-3PM-3L封装产品,采用Trench流片工艺,该器件适
HYG022N03LQ1D HUAYI

获取价格

N-Channel Enhancement Mode MOSFET
HYG022N03LQ1U HUAYI

获取价格

N-Channel Enhancement Mode MOSFET
HYG022N03LQ1V HUAYI

获取价格

N-Channel Enhancement Mode MOSFET
HYG023N03LR1C2 HUAYI

获取价格

此器件为 N 沟道、30V耐压、1.5mΩ内阻、PDFN8L(5x6)封装产品,芯片采用T