Datasheet > HYG023N03LR1V

HYG023N03LR1V

更新时间： 2024-11-13 01:13:03

品牌	Logo	应用领域
华羿微 - HUAYI		/
页数	文件大小	规格书
11页	1198K
描述
N-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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HYG023N03LR1V 数据手册

HYG023N03LR1D/U/V

N-Channel Enhancement Mode MOSFET

Feature

Pin Description



30V/110A

R_{DS(ON)= 2.1mΩ(typ.)@VGS = 10V}

R_{DS(ON)= 2.7mΩ(typ.)@VGS = 4.5V}



100% Avalanche Tested

Reliable and Rugged

Halogen Free and Green Devices Available

(RoHS Compliant)

TO-252-2L

TO-251-3L

TO-251-3S

Applications



Switching Application

Power Management for DC/DC

Battery Protection

N-Channel MOSFET

Ordering and Marking Information

Package Code

D: TO-252-2L

U: TO-251-3L

V:TO-251-3S

G023N03

XYMXXXXXX

Date Code

XYMXXXXXX

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-

Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-

ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”

to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous

material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr

-oduct and/or to this document at any time without notice.

www.hymexa.com

V1.1

12 3 4 5 6 7...11

中文翻译

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