Datasheet > HYG032N03LR1C1

HYG032N03LR1C1

更新时间： 2024-11-13 17:01:31

品牌	Logo	应用领域
华羿微 - HUAYI		/
页数	文件大小	规格书
9页	641K
描述
此器件为30V、3.3mΩ、 DFN3*3-8L封装产品，采用Trench流片工艺，该器件适合低频应用，可满足如输出保护等应用领域。

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HYG032N03LR1C1 数据手册

HYG032N03LR1C1

Single N-Channel Enhancement Mode MOSFET

Feature

Pin Description

D D D D



30V/55A

R_{DS(ON)= 3.3mΩ(typ.) @VGS = 10V}

R_{DS(ON)= 4.3 mΩ(typ.) @VGS = 4.5V}



100% Avalanche Tested

Reliable and Rugged

S S S G

G S S S

Halogen Free and Green Devices Available

(RoHS Compliant)

Pin1

DFN3*3-8L

Applications

Power Management for DC/DC

Switching Application

Battery Protection

Single N-Channel MOSFET

Ordering and Marking Information

Package Code

C1: DFN3*3-8L

G032N03

XYMXXXXX

Date Code

XYMXXXXX

Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-

Nationfinish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free require-

ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green”

to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous

material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr

-oduct and/or to this document at any time without notice.

www.hymexa.com

V1.0

12 3 4 5 6 7...9

中文翻译

下载PDF

与HYG032N03LR1C1相关器件

型号	品牌	获取价格	描述	数据表
HYG035N02KA1C2	HUAYI	获取价格	此器件为 N 沟道、20V耐压、2.6mΩ内阻、PDFN8L(5x6)封装产品，芯片采用T
HYG035N04LR1C2	HUAYI	获取价格	此器件为40V、2.4mΩ、PDFN5*6封装产品，采用Trench流片工艺，可满足如锂电
HYG035N04LR1D	HUAYI	获取价格	此器件为40V、3.0mΩ、TO-252-2L封装产品，采用Trench流片工艺，可满足如
HYG037N03LQ1D	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET
HYG037N03LQ1U	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET
HYG037N03LQ1V	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET
HYG045N03LA1C1	HUAYI	获取价格	此器件为30V、3.9mΩ、DFN3*3_8L封装产品，采用Trench流片工艺，可满足锂
HYG045N03LA1C2	HUAYI	获取价格	此器件为30V、3.6mΩ、PDFN5*6封装产品，采用Trench流片工艺，可满足如锂电
HYG045N03LA1D	HUAYI	获取价格	此器件为30V、3.8mΩ、TO-252-2L封装产品，采用Trench流片工艺，可满足如
HYG045P03LQ1D	HUAYI	获取价格	P-Channel Enhancement Mode MOSFET