Datasheet > HYG045N03LA1C2

HYG045N03LA1C2

更新时间： 2024-11-13 15:19:15

品牌	Logo	应用领域
华羿微 - HUAYI		电池光电二极管
页数	文件大小	规格书
9页	1346K
描述
此器件为30V、3.6mΩ、PDFN5*6封装产品，采用Trench流片工艺，可满足如锂电池保护板等应用领域

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HYG045N03LA1C2 数据手册

HYG045N03LA1C2

Single N-Channel Enhancement Mode MOSFET

Feature

Pin Description



30V/78A

D D D D

R_{DS(ON)= 3.6 mΩ(typ.) @VGS = 10V}

R_{DS(ON)= 4.8 mΩ(typ.) @VGS = 4.5V}



100% Avalanche Tested

Reliable and Rugged

Halogen- Free Devices Available

G S S S

PDFN8L(5x6)

S S S G

Applications



Load Switch

Lithium battery protect board

Single N-Channel MOSFET

Ordering and Marking Information

Package Code

C2: PDFN8L(5x6)

G045N03

XYMXXXXXX

Date Code

XYMXXXXXX

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-

Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-

ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”

to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous

material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr

-oduct and/or to this document at any time without notice.

www.hymexa.com

V1.0 2019

12 3 4 5 6 7...9

中文翻译

下载PDF

与HYG045N03LA1C2相关器件

型号	品牌	获取价格	描述	数据表
HYG045N03LA1D	HUAYI	获取价格	此器件为30V、3.8mΩ、TO-252-2L封装产品，采用Trench流片工艺，可满足如
HYG045P03LQ1D	HUAYI	获取价格	P-Channel Enhancement Mode MOSFET
HYG045P03LQ1U	HUAYI	获取价格	P-Channel Enhancement Mode MOSFET
HYG045P03LQ1V	HUAYI	获取价格	P-Channel Enhancement Mode MOSFET
HYG045P06LA1B	HUAYI	获取价格	此器件为 -60V、3.9mΩ、TO-263-2L封装产品，采用Trench流片工艺，可满
HYG046N04LQ1D	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET
HYG046N04LQ1U	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET
HYG046N04LQ1V	HUAYI	获取价格	N-Channel Enhancement Mode MOSFET
HYG060P04LQ1D	HUAYI	获取价格	此器件为 P 沟道、-40V耐压、5.8mΩ内阻、TO-252-2L封装产品，芯片采用Tr
HYG064N08NA1P	HUAYI	获取价格	此器件为80V、6.4mΩ、TO-220FB-3L封装产品，采用Trench流片工艺，该器