5秒后页面跳转
HYG025N04NA1C2 PDF预览

HYG025N04NA1C2

更新时间: 2024-09-24 17:01:59
品牌 Logo 应用领域
华羿微 - HUAYI 电池光电二极管
页数 文件大小 规格书
9页 1254K
描述
此器件为 40V、1.4mΩ、PDFN5*6封装产品,采用Trench流片工艺,该器件适合低频应用,电池管理系统等应用领域

HYG025N04NA1C2 数据手册

 浏览型号HYG025N04NA1C2的Datasheet PDF文件第2页浏览型号HYG025N04NA1C2的Datasheet PDF文件第3页浏览型号HYG025N04NA1C2的Datasheet PDF文件第4页浏览型号HYG025N04NA1C2的Datasheet PDF文件第5页浏览型号HYG025N04NA1C2的Datasheet PDF文件第6页浏览型号HYG025N04NA1C2的Datasheet PDF文件第7页 
HYG025N04NA1C2  
Single N-Channel Enhancement Mode MOSFET  
Feature  
Pin Description  
40V/190A  
RDS(ON)= 1.4mΩ(typ.) @VGS = 10V  
100% Avalanche Tested  
Reliable and Rugged  
D D D D  
D D D D  
Halogen- Free Devices Available  
G S S S  
S S S G  
PDFN8L(5x6)  
Applications  
Load Switch  
Lithium battery protect board  
Single N-Channel MOSFET  
Ordering and Marking Information  
Package Code  
C2: PDFN8L(5x6)  
C2  
G025N04  
XYMXXXXXX  
Date Code  
XYMXXXXXX  
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-  
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-  
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”  
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous  
material and total of Br and Cl does not exceed 1500ppm by weight).  
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr  
-oduct and/or to this document at any time without notice.  
www.hymexa.com  
V1.0 2019  
1

与HYG025N04NA1C2相关器件

型号 品牌 获取价格 描述 数据表
HYG025N04NA1D HUAYI

获取价格

此器件为40V、2.5mΩ、TO-252-2L封装产品,采用Trench流片工艺,该器件适
HYG030N02KQ1C2 HUAYI

获取价格

此器件为 N 沟道、20V耐压、2.2mΩ内阻、PDFN8L(5x6)封装产品,芯片采用T
HYG030N02KQ1D HUAYI

获取价格

此器件为 N 沟道、20V耐压、2.4mΩ内阻、TO-252-2L封装产品,芯片采用Tre
HYG032N02KQ1C2 HUAYI

获取价格

此器件为25V、2.5mΩ、PDFN5*6封装产品,采用Trench流片工艺,可满足如锂电
HYG032N03LR1C1 HUAYI

获取价格

此器件为30V、3.3mΩ、 DFN3*3-8L封装产品,采用Trench流片工艺,该器件
HYG035N02KA1C2 HUAYI

获取价格

此器件为 N 沟道、20V耐压、2.6mΩ内阻、PDFN8L(5x6)封装产品,芯片采用T
HYG035N04LR1C2 HUAYI

获取价格

此器件为40V、2.4mΩ、PDFN5*6封装产品,采用Trench流片工艺,可满足如锂电
HYG035N04LR1D HUAYI

获取价格

此器件为40V、3.0mΩ、TO-252-2L封装产品,采用Trench流片工艺,可满足如
HYG037N03LQ1D HUAYI

获取价格

N-Channel Enhancement Mode MOSFET
HYG037N03LQ1U HUAYI

获取价格

N-Channel Enhancement Mode MOSFET