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HYG015N03LR1C2 PDF预览

HYG015N03LR1C2

更新时间: 2024-04-09 19:01:40
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华羿微 - HUAYI /
页数 文件大小 规格书
9页 740K
描述
BMS

HYG015N03LR1C2 数据手册

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HYG015N03LR1C2  
Single N-Channel Enhancement Mode MOSFET  
Feature Description  
Pin Description  
z
30V/145A  
D
D D D  
D
D D D  
RDS(ON)= 1.2mΩ (typ.) @VGS = 10V  
RDS(ON)= 1.8mΩ (typ.) @VGS = 4.5V  
z
z
z
100% Avalanche Tested  
Reliable and Rugged  
Halogen- Free Devices Available  
G
S
S S  
S
S S G  
Pin1  
PPAK5*6-8L  
Applications  
z
z
z
Switching Application  
Power Management for DC/DC  
Battery Protection  
Single N-Channel MOSFET  
Ordering and Marking Information  
Package Code  
C2: PPAK5*6-8L  
C2  
G015N03  
XYMXXXXXX  
Date Code  
XYMXXXXXX  
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-  
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-  
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”  
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous  
material and total of Br and Cl does not exceed 1500ppm by weight).  
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr  
-oduct and/or to this document at any time without notice.  
www.hymexa.com  
V1.0  
1

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