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HY5S2B6DLFP-BE PDF预览

HY5S2B6DLFP-BE

更新时间: 2024-11-20 07:02:51
品牌 Logo 应用领域
海力士 - HYNIX 存储内存集成电路动态存储器双倍数据速率时钟
页数 文件大小 规格书
26页 232K
描述
4Banks x 2M x 16bits Synchronous DRAM

HY5S2B6DLFP-BE 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA54,9X9,32
针数:54Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.84访问模式:FOUR BANK PAGE BURST
最长访问时间:9 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):66.7 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:S-PBGA-B54
JESD-609代码:e1长度:8 mm
内存密度:134217728 bit内存集成电路类型:DDR DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:8MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA54,9X9,32
封装形状:SQUARE封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
电源:1.8 V认证状态:Not Qualified
刷新周期:4096座面最大高度:1.2 mm
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.0003 A子类别:DRAMs
最大压摆率:0.13 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:8 mm
Base Number Matches:1

HY5S2B6DLFP-BE 数据手册

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HY5S2B6DLF(P)-xE  
4Banks x 2M x 16bits Synchronous DRAM  
Document Title  
4Bank x 2M x 16bits Synchronous DRAM  
Revision History  
Revision No.  
History  
Initial Draft  
Draft Date  
Dec. 2003  
May. 2004  
Feb. 2005  
Remark  
0.1  
0.2  
0.3  
Preliminary  
Deleted Preliminary  
Changed Operation Voltage : 1.65(min) -> 1.70(min)  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.3 / Feb. 2005  
1

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