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HY5S2B6DLF-SE PDF预览

HY5S2B6DLF-SE

更新时间: 2024-11-20 07:02:51
品牌 Logo 应用领域
海力士 - HYNIX 存储内存集成电路动态存储器双倍数据速率时钟
页数 文件大小 规格书
26页 232K
描述
4Banks x 2M x 16bits Synchronous DRAM

HY5S2B6DLF-SE 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA54,9X9,32
针数:54Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.92Is Samacsys:N
访问模式:FOUR BANK PAGE BURST最长访问时间:7 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):105 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:S-PBGA-B54JESD-609代码:e0
长度:8 mm内存密度:134217728 bit
内存集成电路类型:DDR DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:54字数:8388608 words
字数代码:8000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:8MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA54,9X9,32封装形状:SQUARE
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8 V认证状态:Not Qualified
刷新周期:4096座面最大高度:1.2 mm
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.0003 A子类别:DRAMs
最大压摆率:0.135 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

HY5S2B6DLF-SE 数据手册

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HY5S2B6DLF(P)-xE  
4Banks x 2M x 16bits Synchronous DRAM  
Document Title  
4Bank x 2M x 16bits Synchronous DRAM  
Revision History  
Revision No.  
History  
Initial Draft  
Draft Date  
Dec. 2003  
May. 2004  
Feb. 2005  
Remark  
0.1  
0.2  
0.3  
Preliminary  
Deleted Preliminary  
Changed Operation Voltage : 1.65(min) -> 1.70(min)  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.3 / Feb. 2005  
1

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