生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | VFBGA, | 针数: | 54 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.24 | 风险等级: | 5.84 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 6.5 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PBGA-B54 |
JESD-609代码: | e1 | 长度: | 12 mm |
内存密度: | 268435456 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 54 |
字数: | 16777216 words | 字数代码: | 16000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 16MX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | TIN SILVER COPPER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HY5S56ELFP-S | HYNIX |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 8 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54 | |
HY5S56ESF-H | HYNIX |
获取价格 |
Synchronous DRAM, 16MX16, 6.5ns, CMOS, PBGA54, 8 X 12 MM, 0.80 MM PITCH, FBGA-54 | |
HY5S56ESFP-S | HYNIX |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 8 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54 | |
HY5S56ESF-S | HYNIX |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 8 X 12 MM, 0.80 MM PITCH, FBGA-54 | |
HY5S5A6DLFP-SE | HYNIX |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA- | |
HY5S5A6DLF-SE | HYNIX |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, FBGA-54 | |
HY5S5A6DSFP-SE | HYNIX |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA- | |
HY5S5A6DSF-SE | HYNIX |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, FBGA-54 | |
HY5S5B2BLF-6E | HYNIX |
获取价格 |
256M (8Mx32bit) Mobile SDRAM | |
HY5S5B2BLF-HE | HYNIX |
获取价格 |
256M (8Mx32bit) Mobile SDRAM |