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HY5S56ELFP-H PDF预览

HY5S56ELFP-H

更新时间: 2024-11-20 21:10:59
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器内存集成电路
页数 文件大小 规格书
13页 229K
描述
Synchronous DRAM, 16MX16, 6.5ns, CMOS, PBGA54, 8 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54

HY5S56ELFP-H 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:VFBGA,针数:54
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.84
访问模式:FOUR BANK PAGE BURST最长访问时间:6.5 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PBGA-B54
JESD-609代码:e1长度:12 mm
内存密度:268435456 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
认证状态:Not Qualified座面最大高度:1 mm
自我刷新:YES最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:8 mm
Base Number Matches:1

HY5S56ELFP-H 数据手册

 浏览型号HY5S56ELFP-H的Datasheet PDF文件第2页浏览型号HY5S56ELFP-H的Datasheet PDF文件第3页浏览型号HY5S56ELFP-H的Datasheet PDF文件第4页浏览型号HY5S56ELFP-H的Datasheet PDF文件第5页浏览型号HY5S56ELFP-H的Datasheet PDF文件第6页浏览型号HY5S56ELFP-H的Datasheet PDF文件第7页 
256MBit SDRAMs based on 4M x 4Bank x16 I/O  
Document Title  
4Bank x 4M x 16bits Synchronous DRAM  
Revision History  
Revision No.  
History  
Initial Draft  
Draft Date  
Nov. 2004  
Jan. 2005  
Remark  
Preliminary  
Preliminary  
0.1  
0.2  
Added Speed Product for 133MHz(CL3)  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev 0.2 / Jan. 2005  
1

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