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HY5RS573225FP-22 PDF预览

HY5RS573225FP-22

更新时间: 2024-11-07 14:51:15
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
63页 1090K
描述
DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144

HY5RS573225FP-22 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:BGA包装说明:LFBGA, BGA144,12X12,32
针数:144Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.24
风险等级:5.84Is Samacsys:N
访问模式:FOUR BANK PAGE BURST最长访问时间:0.3 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):450 MHz
I/O 类型:COMMONJESD-30 代码:S-PBGA-B144
长度:12 mm内存密度:268435456 bit
内存集成电路类型:DDR DRAM内存宽度:32
功能数量:1端口数量:1
端子数量:144字数:8388608 words
字数代码:8000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:8MX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装等效代码:BGA144,12X12,32封装形状:SQUARE
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH峰值回流温度(摄氏度):260
电源:2 V认证状态:Not Qualified
刷新周期:4096座面最大高度:1.3 mm
自我刷新:YES连续突发长度:4
最大待机电流:0.03 A子类别:DRAMs
最大压摆率:0.95 mA最大供电电压 (Vsup):2.1 V
最小供电电压 (Vsup):1.9 V标称供电电压 (Vsup):2 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:20宽度:12 mm
Base Number Matches:1

HY5RS573225FP-22 数据手册

 浏览型号HY5RS573225FP-22的Datasheet PDF文件第2页浏览型号HY5RS573225FP-22的Datasheet PDF文件第3页浏览型号HY5RS573225FP-22的Datasheet PDF文件第4页浏览型号HY5RS573225FP-22的Datasheet PDF文件第5页浏览型号HY5RS573225FP-22的Datasheet PDF文件第6页浏览型号HY5RS573225FP-22的Datasheet PDF文件第7页 
HY5RS573225F(P)  
256M (8Mx32) GDDR3 SDRAM  
HY5RS573225F(P)  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 1.1 / Sep. 2005  
1

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