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HY5S26CF-B PDF预览

HY5S26CF-B

更新时间: 2024-11-20 21:20:55
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器内存集成电路
页数 文件大小 规格书
24页 238K
描述
Synchronous DRAM, 8MX16, 9ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54

HY5S26CF-B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:FBGA, BGA54,9X9,32针数:54
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.92
访问模式:FOUR BANK PAGE BURST最长访问时间:9 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):66 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PBGA-B54长度:10.5 mm
内存密度:134217728 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:8MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA54,9X9,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8 V
认证状态:Not Qualified刷新周期:4096
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.0005 A子类别:DRAMs
最大压摆率:0.13 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8.3 mm
Base Number Matches:1

HY5S26CF-B 数据手册

 浏览型号HY5S26CF-B的Datasheet PDF文件第2页浏览型号HY5S26CF-B的Datasheet PDF文件第3页浏览型号HY5S26CF-B的Datasheet PDF文件第4页浏览型号HY5S26CF-B的Datasheet PDF文件第5页浏览型号HY5S26CF-B的Datasheet PDF文件第6页浏览型号HY5S26CF-B的Datasheet PDF文件第7页 
HY5S2A6C(L/S)F / HY5S26CF  
4Banks x 2M x 16bits Synchronous DRAM  
Revision History  
Revision No.  
History  
Draft Date  
Remark  
0.9  
Changed DC Spec. & Pin Cap.  
Sep. 2002  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev. 0.9 / Sep. 02  

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