是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA136,12X17,32 | Reach Compliance Code: | compliant |
风险等级: | 5.92 | 最长访问时间: | 0.25 ns |
最大时钟频率 (fCLK): | 800 MHz | I/O 类型: | COMMON |
交错的突发长度: | 4,8 | JESD-30 代码: | R-PBGA-B136 |
内存密度: | 536870912 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 32 | 端子数量: | 136 |
字数: | 16777216 words | 字数代码: | 16000000 |
最高工作温度: | 85 °C | 最低工作温度: | |
组织: | 16MX32 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA136,12X17,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 电源: | 1.8 V |
认证状态: | Not Qualified | 刷新周期: | 8192 |
连续突发长度: | 4,8 | 子类别: | DRAMs |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HY5RS123235F-16 | HYNIX |
获取价格 |
DDR DRAM, 16MX32, 0.25ns, CMOS, PBGA136, | |
HY5RS123235FP-11 | HYNIX |
获取价格 |
DDR DRAM, 16MX32, 0.25ns, CMOS, PBGA136, 12 X 14 MM, LEAD FREE, FBGA-136 | |
HY5RS123235FP-14 | HYNIX |
获取价格 |
DDR DRAM, 16MX32, 0.25ns, CMOS, PBGA136, 12 X 14 MM, LEAD FREE, FBGA-136 | |
HY5RS123235FP-2 | HYNIX |
获取价格 |
DDR DRAM, 16MX32, 0.25ns, CMOS, PBGA136, 12 X 14 MM, LEAD FREE, FBGA-136 | |
HY5RS573225AFP-1 | HYNIX |
获取价格 |
DDR DRAM, 8MX32, 0.25ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136 | |
HY5RS573225AFP-11 | HYNIX |
获取价格 |
DDR DRAM, 8MX32, 0.25ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136 | |
HY5RS573225AFP-12 | HYNIX |
获取价格 |
DDR DRAM, 8MX32, 0.25ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136 | |
HY5RS573225AFP-14 | HYNIX |
获取价格 |
DDR DRAM, 8MX32, 0.26ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136 | |
HY5RS573225AFP-2 | HYNIX |
获取价格 |
DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136 | |
HY5RS573225AFP-2L | HYNIX |
获取价格 |
DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA136, 11 X 14 MM, ROHS COMPLIANT, FBGA-136 |