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HY5RS123235F-16 PDF预览

HY5RS123235F-16

更新时间: 2024-11-07 19:59:39
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
56页 729K
描述
DDR DRAM, 16MX32, 0.25ns, CMOS, PBGA136,

HY5RS123235F-16 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FBGA, BGA136,12X17,32Reach Compliance Code:compliant
风险等级:5.92最长访问时间:0.25 ns
最大时钟频率 (fCLK):600 MHzI/O 类型:COMMON
交错的突发长度:4,8JESD-30 代码:R-PBGA-B136
内存密度:536870912 bit内存集成电路类型:DDR DRAM
内存宽度:32端子数量:136
字数:16777216 words字数代码:16000000
最高工作温度:85 °C最低工作温度:
组织:16MX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA136,12X17,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH电源:1.8 V
认证状态:Not Qualified刷新周期:8192
连续突发长度:4,8子类别:DRAMs
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOMBase Number Matches:1

HY5RS123235F-16 数据手册

 浏览型号HY5RS123235F-16的Datasheet PDF文件第2页浏览型号HY5RS123235F-16的Datasheet PDF文件第3页浏览型号HY5RS123235F-16的Datasheet PDF文件第4页浏览型号HY5RS123235F-16的Datasheet PDF文件第5页浏览型号HY5RS123235F-16的Datasheet PDF文件第6页浏览型号HY5RS123235F-16的Datasheet PDF文件第7页 
HY5RS123235F  
512M (16Mx32) GDDR3 SDRAM  
HY5RS123235F  
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any re-  
sponsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.1 / Jan. 2004  
1

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