Datasheet > HY5R256HC

HY5R256HC

更新时间： 2024-09-16 23:57:15

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
64页	4001K
描述
-\|2.5V\|8K\|40\|Direct RDRAM - 256M

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HY5R256HC 数据手册

Direct RDRAM^™

256/288-Mbit (512Kx16/18x32s) Preliminary

Overview

The Rambus Direct RDRAM™ is a general purpose high-

performance memory device suitable for use in a broad

range of applications including computer memory, graphics,

video, and any other application where high bandwidth and

low latency are required.

The 256/288-Mbit Direct Rambus DRAMs (RDRAM)are

extremely high-speed CMOS DRAMs organized as 16M

words by 16 or 18 bits. The use of Rambus Signaling Level

(RSL) technology permits 600MHz to 800MHz transfer

rates while using conventional system and board design

technologies. Direct RDRAM devices are capable of

sustained data transfers at 1.25 ns per two bytes (10ns per

sixteen bytes).

The architecture of the Direct RDRAMs allows the highest

sustained bandwidth for multiple, simultaneous randomly

addressed memory transactions. The separate control and

data buses with independent row and column control yield

over 95% bus efficiency. The Direct RDRAM's 32 banks

support up to four simultaneous transactions.

Figure 1: Direct RDRAM uBGA Package

The 256/288-Mbit Direct RDRAMs are offered in a uBGA

package suitable for desktop as well as low-profile add-in

card and mobile applications.

System oriented features for mobile, graphics and large

memory systems include power management, byte masking,

and x18 organization. The two data bits in the x18 organiza-

tion are general and can be used for additional storage and

bandwidth or for error correction.

Direct RDRAMs operate from a 2.5 volt supply.

Key Timing Parameters / Part Numbers

Features

I/O Freq. Core Access Time

Part

Number

Organization^a

MHz

(ns)

0 Highest sustained bandwidth per DRAM device

- 1.6GB/s sustained data transfer rate

- Separate control and data buses for maximized

efficiency

- Separate row and column control buses for

easy scheduling and highest performance

- 32 banks: four transactions can take place simul-

taneously at full bandwidth data rates

512Kx16x32s

512Kx18x32s

600

711

800

600

711

800

HY5R256HC653

HY5R256HC745

HY5R256HC845

HY5R256HC840

HY5R288HC653

HY5R288HC745

HY5R288HC845

HY5R288HC840

0 Low latency features

- Write buffer to reduce read latency

- 3 precharge mechanisms for controller flexibility

- Interleaved transactions

a. The bank “32s” designation indicates that this RDRAM core is

composed of 32 banks which use a “split” bank architecture.

0 Advanced power management:

- Multiple low power states allows flexibility in power

consumption versus time to transition to active state

- Power-down self-refresh

0 Organization: 2Kbyte pages and 32 banks, x 16/18

- x18 organization allows ECC configurations or

increased storage/bandwidth

- x16 organization for low cost applications

0 Uses Rambus Signaling Level (RSL) for up to 800MHz

operation

Rev. 0.9 / Dec.2000

This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of

circuits described. No patent licenses are implied.

12 3 4 5 6 7...64

中文翻译

下载PDF

与HY5R256HC相关器件

型号	品牌	获取价格	描述	数据表
HY5R256HC653	HYNIX	获取价格	Rambus DRAM, 16MX16, 53ns, CMOS, PBGA92, MICRO, BGA-92
HY5R256HC845	HYNIX	获取价格	Rambus DRAM, 16MX16, 45ns, CMOS, PBGA92, MICRO, BGA-92
HY5R288HC	ETC	获取价格	-\|2.5V\|8K\|40\|Direct RDRAM - 288M
HY5R288HC653	HYNIX	获取价格	Rambus DRAM, 16MX18, 53ns, CMOS, PBGA92, MICRO, BGA-92
HY5R288HC745	HYNIX	获取价格	Rambus DRAM, 16MX18, 45ns, CMOS, PBGA92, MICRO, BGA-92
HY5RC1809-60SHP	HYNIX	获取价格	Rambus DRAM, 2MX9, CMOS, PDSO72
HY5RC1809-66SHP	HYNIX	获取价格	Rambus DRAM, 2MX9, CMOS, PDSO72
HY5RC1809-66SVP	HYNIX	获取价格	Rambus DRAM, 2MX9, CMOS
HY5RC6408-60SVP	HYNIX	获取价格	Rambus DRAM, 8MX8, CMOS
HY5RC6408-66SHP	HYNIX	获取价格	Rambus DRAM, 8MX8, CMOS, PDSO72

与HY5R256HC相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

14
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

13
SL74HC10N：高性能三输入与非门解析
2024-09-03

93
AIC1781A 电池充电控制器深度解析
2024-09-03

82

产品中心

服务支持

精选活动

关于我们

帮助中心

HY5R256HC

HY5R256HC 数据手册

与HY5R256HC相关器件

与HY5R256HC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HY5R256HC

HY5R256HC 数据手册

与HY5R256HC相关器件

与HY5R256HC相关文章

您还可以找

您在本页遇到什么问题？