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HWL26NPA PDF预览

HWL26NPA

更新时间: 2024-01-17 16:18:06
品牌 Logo 应用领域
汉威 - HW 光电二极管
页数 文件大小 规格书
2页 72K
描述
L-Band GaAs POWER FET

HWL26NPA 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:UNCASED CHIP, R-XUUC-N4Reach Compliance Code:unknown
风险等级:5.79Is Samacsys:N
最大漏极电流 (Abs) (ID):0.28 AFET 技术:METAL SEMICONDUCTOR
最高频带:L BANDJESD-30 代码:R-XUUC-N4
湿度敏感等级:1端子数量:4
工作模式:DEPLETION MODE最高工作温度:175 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP峰值回流温度(摄氏度):225
极性/信道类型:N-CHANNEL功耗环境最大值:1.7 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

HWL26NPA 数据手册

 浏览型号HWL26NPA的Datasheet PDF文件第2页 
        
        
        
HWL26NPA  
L-Band GaAs POWER FET  
Autumn 2002 V1  
Features  
Plastic Packaged GaAs Power FET  
Outline Dimensions  
Suitable for Commercial Wireless Applications  
High Efficiency  
3V to 6V Operation  
1
1
Pin 1: Source  
Pin 2: Gate  
Pin 3: Drain  
Description  
2
3
The HWL26NPA is a medium Power GaAs FET using  
surface mount type plastic package for various L-Band  
applications. It is suitable for various 900 MHz, 1900  
MHz cellular/wireless applications.  
Absolute Maximum Ratings  
VDS  
VGS  
ID  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
+7V  
-5V  
PA Package (SOT-89)  
IDSS  
1mA  
IG  
Gate Current  
TCH  
TSTG  
PT  
Channel Temperature  
Storage Temperature  
Power Dissipation  
150 C  
°
-65 to +150 C  
°
2 W  
Electrical Specifications  
(TA=25 C) f=1900 MHz for all RF Tests  
°
Symbol  
IDSS  
Parameters & Conditions  
Units  
mA  
V
Min.  
Typ.  
220  
-2.0  
120  
62.5  
Max.  
Saturated Current at VDS=5V, VGS=0V  
Pinch-off Voltage at VDS=5V, ID=11mA  
Transconductance at VDS=5V, ID=110mA  
Thermal Resistance  
180  
-
VP  
-3.5  
-1.5  
gm  
mS  
-
-
-
-
Rth  
C/W  
°
Power Output at Test Points  
VDS=3V, ID=0.5IDSS  
VDS=5V, ID=0.5IDSS  
P1dB  
G1dB  
PAE  
dBm  
dB  
21.0  
23.0  
21.5  
24.5  
-
-
Gain at 1dB Compression Point  
VDS=3V, ID=0.5IDSS  
VDS=5V, ID=0.5IDSS  
9
10  
10.0  
11.0  
-
-
Power-Added Efficiency (POUT = P1dB  
VDS=3V, ID=0.5IDSS  
VDS=5V, ID=0.5IDSS  
)
%
40.0  
45.0  
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512  
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.  

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