Datasheet > HWL26YC

HWL26YC

更新时间： 2024-09-26 03:43:11

品牌	Logo	应用领域
汉威 - HW		晶体晶体管放大器
页数	文件大小	规格书
2页	77K
描述
L-Band Power FET Via Hole Chip

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HWL26YC 数据手册

HWL26YC

L-Band Power FET Via Hole Chip

Autumn 2002 V1

Features

Outline Dimensions

Low Cost GaAs Power FET

•

Class A or Class AB Operation

18 dB Typical Gain at 2.4 GHz

5V to 10V Operation

376

226

451.5

Description

The HWL26YC is a medium power GaAs FET

designed for various L-band & S-band applications.

226.0

Absolute Maximum Ratings

V_DS

V_GS

I_D

Drain to Source Voltage

Gate to Source Voltage

Drain Current

+15V

-5V

I_DSS

0.0

75.5

275

440

524

I_G

Gate Current

1mA

T_CH

T_STG

Channel Temperature

Storage Temperature

Power Dissipation

175 C

Units: µm

-65 to +175 C

Thickness: 50 5

Chip size 50

Bond Pad 1, 3 (Source):100 x 100

P_T

1.7W

Bond Pad 2

Bond Pad 4

(Gate): 100 x 100

(Drain): 100 x 100

* mounted on an infinite heat sink

Electrical Specifications

(T_A=25 C) f = 2.4 GHz for all RF Tests

Symbol

Parameters & Conditions

Units

Min.

Typ.

Max.

I_DSS

Saturated Current at V_DS=3V, V_GS=0V

Pinch-off Voltage at V_DS=3V, I_D=10mA

Transconductance at V_DS=3V, I_D=100mA

150

-3.5

200

280

V_P

dBm

-2.0

120

-1.5

Power Output at Test Points

V_DS=10V, I_D=0.5 I_DSS

P_1dB

G_1dB

PAE

Gain at 1dB Compression Point

V_DS=10V, I_D=0.5 I_DSS

Power-Added Efficiency (P_OUT= P_1dB

V_DS=10V, I_D=0.5 I_DSS

)

Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.

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