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HWL34NC PDF预览

HWL34NC

更新时间: 2024-01-10 05:31:59
品牌 Logo 应用领域
汉威 - HW 晶体晶体管放大器
页数 文件大小 规格书
2页 81K
描述
L-Band Power FET Non-Via Hole Chip

HWL34NC 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:FLANGE MOUNT, R-CDFM-F2Reach Compliance Code:unknown
风险等级:5.76Is Samacsys:N
最大漏极电流 (Abs) (ID):1.6 AFET 技术:METAL SEMICONDUCTOR
JESD-30 代码:R-CDFM-F2湿度敏感等级:1
端子数量:2最高工作温度:175 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):225
极性/信道类型:N-CHANNEL功耗环境最大值:12 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

HWL34NC 数据手册

 浏览型号HWL34NC的Datasheet PDF文件第2页 
HWL34NC  
L-Band Power FET Non-Via Hole Chip  
Autumn 2002 V1  
14.5 dB Typical Gain at 2.4 GHz  
5V to 10V Operation  
Outline Dimensions  
1525.0  
1392.5  
9
Description  
1235.0  
The HWL34NC is a power GaAs FET designed for  
various L-band & S-band applications.  
1
5
6
7
8
1077.5  
920.0  
762.5  
1 0  
2
Absolute Maximum Ratings  
1 1  
VDS  
VGS  
ID  
Drain to Source Voltage +15V  
605.0  
3
Gate to Source Voltage  
Drain Current  
-5V  
IDSS  
6mA  
447.5  
290.0  
132.5  
0.0  
1 2  
IG  
Gate Current  
4
TCH  
TSTG  
Channel Temperature  
Storage Temperature  
Power Dissipation  
175 C  
°
1 3  
-65 to +175 C  
°
*
PT  
12W  
0.0  
444.5  
75.5  
524.0  
* mounted on an infinite heat sink  
Units: µm  
Thickness: 100 5  
Chip size 50  
Bond Pads1-4 (Gate):  
100 x 100  
100 x 100  
UnBond Pads9-13(Source):100 x 100
Electrical Specifications  
(TA=25 C) f = 2.4 GHz for a
°
Bond Pads5-8 (Drain):  
Symbol  
Parameters & Conditions  
IDSS  
Saturated Current at VDS=3V, VGS=0V  
Pinch-off Voltage at VDS=3V, ID=60mA  
Transconductance at VDS=3V, ID=600mA  
mA  
V
900  
-3.5  
-
1200  
-2.0  
700  
34  
1600  
VP  
-1.5  
mS  
dBm  
dB  
-
-
-
-
g
m
Power Output at Test Points  
VDS=10V, ID=0.5 IDSS  
P1dB  
G1dB  
PAE  
33  
Gain at 1dB Compression Point  
VDS=10V, ID=0.5 IDSS  
12.5  
25  
13.5  
30  
Power-Added Efficiency (POUT = P1dB  
VDS=10V, ID=0.5 IDSS  
)
%
Small Signal Common Source Scattering Parameters  
S-MAGN AND ANGLES  
VDS=10V, IDS=0.5IDSS  
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512  
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.  

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