Datasheet > HWL34YRA

HWL34YRA

更新时间： 2024-09-26 03:02:39

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描述
L-Band GaAs Power FET

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HWL34YRA 数据手册

HWL34YRA

L-Band GaAs Power FET

Autumn 2002 V1

Outline Dimensions

Features

Low Cost GaAs Power FET

•

Class A or Class AB Operation

14.5 dB Typical Gain at 2.4GHz

5V to 10V Operation

Description

The HWL34YRA is a Power GaAs FET designed for

various L-band & S-band applications. It is presently

offered in low cost ceramic package.

Absolute Maximum Ratings

V_DS

V_GS

I_D

Drain to Source Voltage

Gate to Source Voltage

Drain Current

+15V

-5V

I_DSS

I_G

Gate Current

6mA

T_CH

Channel Temperature

175 C

T_STGStorage Temperature

-65 to +175 C

RA Package (Ceramic)

P_T

Power Dissipation

12W

mounted on an infinite heat sink.

Electrical Specifications

(T_A=25 C) f =2400 MHz for all RF Tests

Symbol

I_DSS

Parameters & Conditions

Units

Min.

Typ.

1200

-2.0

Max.

1600

-1.5

Saturated Current at V_DS=3V, V_GS=0V

Pinch-off Voltage at V_DS=3V, I_D=60mA

Transconductance at V_DS=3V, I_D=600mA

900

-3.5

V_P

700

R_th

Thermal Resistance

C/W

P_1dB

Power Output at Test Points

V_DS=10V, I_D= 0.5Idss

dBm

G_1dB

PAE

Gain at 1dB Compression Point

V_DS=10V, I_D= 0.5Idss

13.5

14.5

Power-Added Efficiency (P_out= P_1dB

V_DS=10V, I_D= 0.5Idss

)

Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.

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