Datasheet > HWL27YRA

HWL27YRA

更新时间： 2024-09-26 03:10:07

品牌	Logo	应用领域
汉威 - HW		晶体晶体管放大器
页数	文件大小	规格书
4页	92K
描述
L-Band GaAs Power FET

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HWL27YRA 数据手册

HWL27YRA

L-Band GaAs Power FET

Autumn 2002 V1

Features

Outline Dimensions

Low Cost GaAs Power FET

•

Class A or Class AB Operation

Greater than 17 dB Gain

5V to 10V Operation

Description

The HWL27YRA is a Medium Power GaAs FET

designed for various L-band & S-band applications.

It is presently offered in low cost ceramic package.

Absolute Maximum Ratings

V_DS

V_GS

I_D

Drain to Source Voltage

Gate to Source Voltage

Drain Current

+15V

-5V

I_DSS

I_G

Gate Current

2mA

T_CH

Channel Temperature

175 C

T_STGStorage Temperature

-65 to +175 C

RA Package (Ceramic)

P_T

Power Dissipation

3.5W

* mounted on an infinite heat sink

Electrical Specifications

(TA=25 C) f = 2400 MHz for all RF Tests

Symbol

I_DSS

Parameters & Conditions

Units

Min.

300

-3.5

Typ.

400

-2.0

250

Max.

600

-1.5

Saturated Current at V_DS=3V, V_GS=0V

Pinch-off Voltage at V_DS=3V, I_D=20mA

Transconductance at V_DS=3V, I_D=200mA

V_P

R_th

Thermal Resistance

C/W

P_1dB

Power Output at Test Points

V_DS=10V, I_D=0.5I_DSS

dBm

27.5

G_1dB

PAE

Gain at 1dB Compression Point

V_DS=10V, I_D=0.5I_DSS

Power-Added Efficiency (P_OUT= P_1dB

V_DS=10V, I_D=0.5I_DSS

)

Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.

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