Datasheet > HWL30YRF

HWL30YRF

更新时间： 2024-09-26 02:53:03

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描述
L-Band GaAs Power FET

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HWL30YRF 数据手册

HWL30YRF

L-Band GaAs Power FET

Autumn 2002 V1

Features

Outline Dimensions

Low Cost GaAs Power FET

•

Class A or Class AB Operation

Typical 16.5 dB Gain

5V to 10V Operation

Description

The HWL30YRF is a Medium Power GaAs FET

designed for various L-band & S-band

applications. It is presently offered in low cost

ceramic package.

RF Package (Ceramic)

Absolute Maximum Ratings

V_DS

V_GS

I_D

Drain to Source Voltage

Gate to Source Voltage

Drain Current

+15V

-5V

I_DSS

I_G

Gate Current

3 mA

T_CH

Channel Temperature

175°C

-65 to +175°C

T_STGStorage Temperature

P_T

Power Dissipation

* mounted on an infinite heat sink.

Electrical Specifications

(TA=25°C) f = 2400 MHz for all RF Tests

Symbol

I_DSS

Parameters & Conditions

Units

Min.

500

-3.5

Typ.

600

-2.0

300

Max.

900

-1.5

Saturated Current at V_DS=5V, V_GS=0V

Pinch-off Voltage at V_DS=5V, I_D=30mA

Transconductance at V_DS=5V, I_D=300mA

V_P

R_th

Thermal Resistance

°C/W

P_1dB

Power Output at Test Points

V_DS=10V, I_D=0.5I_DSS

dBm

G_1dB

PAE

Gain at 1dB Compression Point

V_DS=10V, I_D=0.5I_DSS

16.5

Power-Added Efficiency (P_OUT= P_1dB

V_DS=10V, I_D= I_D=0.5I_DSS

)

Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.

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