Datasheet > HN7G01FU-A(T5L,F,T

HN7G01FU-A(T5L,F,T

更新时间： 2024-10-30 18:32:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	344K
描述
Small Signal Bipolar Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HN7G01FU-A(T5L,F,T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	1.59
Base Number Matches：	1

HN7G01FU-A(T5L,F,T 数据手册

浏览型号HN7G01FU-A(T5L,F,T的Datasheet PDF文件第2页

浏览型号HN7G01FU-A(T5L,F,T的Datasheet PDF文件第3页

HN7G01FU

TOSHIBA Multi Chip Discrete Device

Preliminary

HN7G01FU

Power Management Switch Application

Driver Circuit Application

Unit: mm

Interface Circuit Application

•

Q1 (transistor): 2SA1955 equivalent

Q2 (MOS-FET): 2SK1830 equivalent

Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

−15

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

−12

−5

−400

−50

Base current

Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

JEDEC

JEITA

―

Gate-source voltage

Drain current

GSS

TOSHIBA

Weight: 6.8 mg (typ.)

Q1, Q2 Common Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

200

Unit

Power dissipation

(Note 1)

Junction temperature

125

°C

Storage temperature range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Marking

Pin Assignment (top view)

2007-11-01

12 3 4 5

中文翻译

下载PDF

与HN7G01FU-A(T5L,F,T相关器件

型号	品牌	获取价格	描述	数据表
HN7G01FU-A(TE85LF)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
HN7G01FU-B	TOSHIBA	获取价格	TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 6 PIN, BIP General Purpose
HN7G02FE	TOSHIBA	获取价格	Power Management Switch Applications, Inverter Circuit
HN7G02FU	TOSHIBA	获取价格	TOSHIBA Multi Chip Discrete Device
HN7G02FU(TE85LF)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
HN7G02FU_07	TOSHIBA	获取价格	Power Management Switch Application, Inverter Circuit
HN7G03FU	TOSHIBA	获取价格	Power Management Switch Applications
HN7G03FU-A	TOSHIBA	获取价格	TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1E, 6 PIN, BIP General
HN7G03FU-B	TOSHIBA	获取价格	TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1E, 6 PIN, BIP General
HN7G04FU	TOSHIBA	获取价格	General-Purpose Amplifier Applications