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HN7G07FU-B PDF预览

HN7G07FU-B

更新时间： 2024-09-15 13:02:07
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器开关
页数 文件大小 规格书
6页 234K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal

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中文翻译

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HN7G07FU-B 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.8Is Samacsys：N
其他特性：BUILT-IN BIAS RESISTOR RATIO IS 0.22最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：50JESD-30 代码：R-PDSO-G6
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN AND PNP认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：130 MHz
Base Number Matches：1

HN7G07FU-B 数据手册

 浏览型号HN7G07FU-B的Datasheet PDF文件第2页浏览型号HN7G07FU-B的Datasheet PDF文件第3页浏览型号HN7G07FU-B的Datasheet PDF文件第4页浏览型号HN7G07FU-B的Datasheet PDF文件第5页浏览型号HN7G07FU-B的Datasheet PDF文件第6页 
HN7G07FU  
TOSHIBA Multichip Discrete Device  
HN7G07FU  
Power Management Switch Applications, Inverter Circuit  
Applications, Driver Circuit Applications and Interface  
Circuit Applications  
Unit: mm  
•
Combining transistor and BRT reduces the parts count, enabling the  
design of more compact equipment with a simpler system configuration.  
Q1: 2SC5376F equivalent  
Q2: RN1115F equivalent  
Q1 Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
15  
12  
5
V
V
1.EMITTER1  
(E1)  
(B1)  
(C2)  
(E2)  
(B2)  
(C1)  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
2.BASE1  
3.COLLECTOR2  
4.EMITTER2  
5.BASE2  
V
I
500  
50  
mA  
mA  
C
6.COLLECTOR1  
Base current  
I
B
JEDEC  
JEITA  
―
―
Q2 Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
TOSHIBA  
2-2J1A  
V
50  
50  
V
V
CBO  
Weight: 0.0068 g (typ.)  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
CEO  
EBO  
Marking  
Type Name  
hFE Rank  
V
10  
V
I
100  
mA  
C
7 5 A  
Q1, Q2 Common Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector power dissipation  
Junction temperature  
P *  
C
200  
150  
mW  
°C  
Equivalent Circuit  
(top view)  
T
j
Storage temperature range  
T
stg  
−55~150  
°C  
6
5
4
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.)  
are within the absolute maximum ratings.  
Q2  
Q1  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2
3
*: Total rating. 130 mW per element should not be exceeded.  
1
2007-11-01  
123456

中文翻译

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