Datasheet > HN85C256ATI85E

HN85C256ATI85E

更新时间： 2024-11-06 12:04:55

品牌	Logo	应用领域
瑞萨 - RENESAS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
18页	1055K
描述
256k EEPROM (32-kword Ã 8-bit)

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HN85C256ATI85E 数据手册

Data Sheet

HN58C256AI Series

256k EEPROM (32-kword × 8-bit)

Description

R10DS0218EJ0100

Rev.1.00

Oct 07, 2013

Renesas Electronics' HN58C256AI are electrically erasable and programmable ROMs organized as 32768-word × 8-bit.

They have realized high speed low power consumption and high reliability by employing advanced MNOS memory

technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make

their write operations faster.

Features

•

Single 5 V supply: 5 V 10%

Access time: 85 ns/100 ns (max)

Power dissipation

⎯ Active: 20 mW/MHz, (typ)

⎯ Standby: 110 μW (max)

•

On-chip latches: address, data, CE, OE, WE

Automatic byte write: 10 ms max

Automatic page write (64 bytes): 10 ms max

Data polling and Toggle bit

Data protection circuit on power on/off

Conforms to JEDEC byte-wide standard

Reliable CMOS with MNOS cell technology

10⁵erase/write cycles (in page mode)

10 years data retention

Software data protection

There are lead free products

R10DS0218EJ0100 Rev.1.00

Oct 07, 2013

Page 1 of 16

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