生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.04 A |
集电极-发射极最大电压: | 8 V | 配置: | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE): | 50 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 6 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 10000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HN9C09FT | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 8V V(BR)CEO | 15MA I(C) | TSOP | |
HN9C10FT(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,12V V(BR)CEO,80MA I(C),TSOP | |
HN9C12FT | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 12V V(BR)CEO | 30MA I(C) | TSOP | |
HN9C13FT | TOSHIBA |
获取价格 |
TRANSISTOR RF SMALL SIGNAL TRANSISTOR, TU6, 6 PIN, BIP RF Small Signal | |
HN9C13FT(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,12V V(BR)CEO,30MA I(C),TSOP | |
HN9C14FT | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 12V V(BR)CEO | 30MA I(C) | TSOP | |
HN9C14FT(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,12V V(BR)CEO,30MA I(C),TSOP | |
HN9C15FT | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 7V V(BR)CEO | 40MA I(C) | TSOP | |
HN9C16FT(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,7V V(BR)CEO,15MA I(C),TSOP | |
HN9C18FT | TOSHIBA |
获取价格 |
TRANSISTOR RF SMALL SIGNAL TRANSISTOR, TU6, 6 PIN, BIP RF Small Signal |