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HN7G03FU PDF预览

HN7G03FU

更新时间: 2024-10-30 03:42:23
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管
页数 文件大小 规格书
7页 547K
描述
Power Management Switch Applications

HN7G03FU 技术参数

生命周期:Obsolete包装说明:2-2J1E, 6 PIN
针数:6Reach Compliance Code:unknown
风险等级:5.77Is Samacsys:N
最大集电极电流 (IC):0.4 A集电极-发射极最大电压:12 V
配置:SINGLE WITH BUILT-IN FET AND DIODE最小直流电流增益 (hFE):300
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

HN7G03FU 数据手册

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HN7G03FU  
TOSHIBA Multichip Discrete Device  
HN7G03FU  
Unit: mm  
Power Management Switch Applications  
Driver Circuit Applications  
Interface Circuit Applications  
Q1 (transistor) : 2SA1955 equivalent  
Q2 (S-MOS)  
: SSM3K04FU equivalent  
1.EMITTER  
2.BASE  
3.DRAIN  
Q1 Absolute Maximum Ratings (Ta = 25°C)  
4.SOURCE  
5.GATE  
6.COLLECTOR  
Characteristic  
Symbol  
Rating  
Unit  
US6  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
CBO  
V
CEO  
V
EBO  
15  
12  
5  
V
V
JEDEC  
JEITA  
V
I
400  
50  
mA  
mA  
C
TOSHIBA  
2-2J1E  
Base current  
I
B
Weight: 6.8 mg (typ.)  
Q2 Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
20  
10  
V
V
DS  
Gate-source voltage  
Drain current  
V
GSS  
I
100  
mA  
D
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
P*  
Rating  
Unit  
200  
125  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* Total rating.  
1
2007-11-01  

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