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HN7G05FU PDF预览

HN7G05FU

更新时间: 2024-10-30 03:42:23
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管
页数 文件大小 规格书
6页 435K
描述
Power Management Switch Applications, Inverter Circuit

HN7G05FU 技术参数

生命周期:Obsolete包装说明:2-2J1E, US6, 6 PIN
针数:6Reach Compliance Code:unknown
风险等级:5.82Is Samacsys:N
其他特性:BUILT-IN RESISTOR RATIO 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN FET AND DIODE
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

HN7G05FU 数据手册

 浏览型号HN7G05FU的Datasheet PDF文件第2页浏览型号HN7G05FU的Datasheet PDF文件第3页浏览型号HN7G05FU的Datasheet PDF文件第4页浏览型号HN7G05FU的Datasheet PDF文件第5页浏览型号HN7G05FU的Datasheet PDF文件第6页 
HN7G05FU  
TOSHIBA Multichip Discrete Device  
HN7G05FU  
Power Management Switch Applications, Inverter Circuit  
Applications, Driver Circuit Applications and Interface  
Circuit Applications  
Unit: mm  
Q1 (transistor): RN2301 equivalent  
Q2 (MOSFET): 2SK1830 equivalent  
Q1 (Transistor) Absolute Maximum Ratings  
(Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
10  
V
I
100  
mA  
C
JEDEC  
JEITA  
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)  
TOSHIBA  
2-2J1E  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
Weight: 0.0068 g (typ.)  
V
20  
10  
50  
V
V
DS  
Gate-source voltage  
Drain current  
V
GSS  
I
mA  
Marking  
D
Q1, Q2 Common Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
Rating  
Unit  
P (Note 1)  
200  
150  
mW  
°C  
60  
Junction temperature  
T
j
Storage temperature range  
T
stg  
55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Equivalent Circuit (top view)  
6
5
2
4
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
Q2  
Q1  
1
3
Note 1: Total rating  
1
2007-11-01  

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