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HN3C06FTE85R PDF预览

HN3C06FTE85R

更新时间: 2024-09-13 20:47:51
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
1页 34K
描述
TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

HN3C06FTE85R 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:LOW NOISE最大集电极电流 (IC):0.08 A
基于收集器的最大容量:1 pF集电极-发射极最大电压:12 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):30
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):7000 MHz
Base Number Matches:1

HN3C06FTE85R 数据手册

  

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