生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.38 | Is Samacsys: | N |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.03 A |
基于收集器的最大容量: | 0.85 pF | 集电极-发射极最大电压: | 12 V |
配置: | SEPARATE, 2 ELEMENTS | 最小直流电流增益 (hFE): | 80 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 6 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 7000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HN3C09FU(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,12V V(BR)CEO,15MA I(C),TSOP | |
HN3C10F | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
HN3C10FE | TOSHIBA |
获取价格 |
TRANSISTOR RF SMALL SIGNAL TRANSISTOR, ES6, 6 PIN, BIP RF Small Signal | |
HN3C10FE(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,12V V(BR)CEO,80MA I(C),TSOP | |
HN3C10FT | TOSHIBA |
获取价格 |
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS | |
HN3C10FU | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
HN3C10FU(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,12V V(BR)CEO,80MA I(C),TSOP | |
HN3C11F | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
HN3C11FU | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
HN3C12 | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |