生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.38 | Is Samacsys: | N |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.015 A |
基于收集器的最大容量: | 0.85 pF | 集电极-发射极最大电压: | 10 V |
配置: | SEPARATE, 2 ELEMENTS | 最小直流电流增益 (hFE): | 50 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 6 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HN3C13F | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 30MA I(C) | TSOP | |
HN3C13FU | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
HN3C14 | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
HN3C14F | TOSHIBA |
获取价格 |
TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
HN3C14FT | TOSHIBA |
获取价格 |
TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
HN3C14FU | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
HN3C14FU(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,10V V(BR)CEO,60MA I(C),SO | |
HN3C15F | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 7V V(BR)CEO | 40MA I(C) | TSOP | |
HN3C15FU | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
HN3C15FU(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,7V V(BR)CEO,40MA I(C),SO |